Insights into Interface Treatments in p-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor

Rosalba Liguori*, Hakan Usta, Sandra Fusco, Antonio Facchetti, Gian Domenico Licciardo, Luigi DI Benedetto, Alfredo Rubino

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Organic thin-film transistors (OTFTs) were fabricated using a novel small molecule, C6-NTTN, as the semiconductor layer in several different architectures. The C6-NTTN layer was deposited via both vacuum evaporation at different substrate temperatures and via solution-processing, which yield maximum hole mobilities of 0.16 and 0.05 cm2/Vċs, respectively. Surface treatments of the substrate, insulator, and metal contacts used for OTFT fabrication employing polymer films and different self-assembled monolayers were investigated. In particular, in bottom-gate devices, the insulator surface hydrophobicity was optimized by the deposition of poly(methyl methacrylate) or hexamethyldisilazane, while in the top-gate geometry, pentafluorobenzenethiol was efficiently used to modify the substrate surface energy and to change the contact work function. Atomic force microscopy analysis was exploited to understand the relationship between the semiconductor thin-film morphology and the device electrical performance. The results shown here indicate an inverse proportionality between the mobility and the interface trap density, with parameters depending especially on semiconductor-insulator interfacial properties, and a correlation between the threshold voltage and the characteristics of the semiconductor-metal interface.

Original languageEnglish (US)
Article number7888527
Pages (from-to)2338-2344
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - May 2017


  • Charge carrier mobility
  • organic thin-film transistors (OTFTs)
  • semiconductor-insulator interfaces
  • semiconductor-metal interfaces
  • surface treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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