A versatile multilayer technique has been developed to form 45°YBa 2Cu3O7-x  tilt grain boundary junctions on LaAlO3 substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO3substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa2Cu 3O7-x thin film is then grown using POMBE. The resultant film is c-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45°about the  axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)