Integrating Silicon detector with segmentation for scanning transmission X-ray microscopy

Michael Feser, Benjamin Hornberger, Chris Jacobsen, Gianluigi De Geronimo, Pavel Rehak*, Peter Holl, Lothar Strüder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000 eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency (> 75 % for 250 eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1 ms integration time, which is equivalent to about five photons per channel at 360 eV X-ray energy.

Original languageEnglish (US)
Pages (from-to)841-854
Number of pages14
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume565
Issue number2
DOIs
StatePublished - Sep 15 2006

Keywords

  • X-ray detectors
  • X-ray microscopy
  • X-ray phase contrast imaging
  • X-ray spectromicroscopy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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