TY - JOUR
T1 - Integrating Silicon detector with segmentation for scanning transmission X-ray microscopy
AU - Feser, Michael
AU - Hornberger, Benjamin
AU - Jacobsen, Chris
AU - De Geronimo, Gianluigi
AU - Rehak, Pavel
AU - Holl, Peter
AU - Strüder, Lothar
N1 - Funding Information:
The work at Stony Brook University was supported by the National Institutes of Health under Grant R01 EB00479-01A1 and the National Science Foundation under Grant NSF CHE-0221934. Use of the National Synchrotron Light Source and work at the Instrumentation Division at Brookhaven National Laboratory was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886. Work at the MPI-HLL was supported by the Max-Planck-Society.
PY - 2006/9/15
Y1 - 2006/9/15
N2 - Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000 eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency (> 75 % for 250 eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1 ms integration time, which is equivalent to about five photons per channel at 360 eV X-ray energy.
AB - Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000 eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency (> 75 % for 250 eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1 ms integration time, which is equivalent to about five photons per channel at 360 eV X-ray energy.
KW - X-ray detectors
KW - X-ray microscopy
KW - X-ray phase contrast imaging
KW - X-ray spectromicroscopy
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U2 - 10.1016/j.nima.2006.05.086
DO - 10.1016/j.nima.2006.05.086
M3 - Article
AN - SCOPUS:33748167395
SN - 0168-9002
VL - 565
SP - 841
EP - 854
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 2
ER -