Abstract
Epitaxial MgO was deposited onto Si(001) substrates by molecular beam epitaxy using elemental metallic sources and molecular oxygen at temperatures from 150 to 400°C. To facilitate epitaxy through misfit strain relaxation, epitaxial MgO layers were grown on SrO and SrTiO3 buffer layers deposited on Si(001) substrates. The structure of the epitaxial layers was determined by X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy. The observed orientation for the MgO/SrO/Si multilayer is cube-on-cube. The X-ray rocking curve full width half maximum of the MgO on SrO buffer layers was 2.2°. SrTiO3 buffer layers grown by recrystallization were epitaxial and exhibited improved morphology relative to those grown at a fixed growth temperature. X-ray analysis of a 5.2 nm recrystallized SrTiO3 film indicates a fully relaxed and phase pure film. The observed orientation of MgO using SrTiO3 buffer layers is MgO[100]∥SrTiO3[100]∥[110].
Original language | English (US) |
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Pages (from-to) | 149-154 |
Number of pages | 6 |
Journal | Journal of Electroceramics |
Volume | 13 |
Issue number | 1-3 |
DOIs | |
State | Published - Jul 2004 |
Keywords
- Epitaxy
- MgO
- Si
- SrO
- SrTiO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Electrical and Electronic Engineering
- Materials Chemistry