Epitaxial MgO was deposited onto Si(001) substrates by molecular beam epitaxy using elemental metallic sources and molecular oxygen at temperatures from 150 to 400°C. To facilitate epitaxy through misfit strain relaxation, epitaxial MgO layers were grown on SrO and SrTiO3 buffer layers deposited on Si(001) substrates. The structure of the epitaxial layers was determined by X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy. The observed orientation for the MgO/SrO/Si multilayer is cube-on-cube. The X-ray rocking curve full width half maximum of the MgO on SrO buffer layers was 2.2°. SrTiO3 buffer layers grown by recrystallization were epitaxial and exhibited improved morphology relative to those grown at a fixed growth temperature. X-ray analysis of a 5.2 nm recrystallized SrTiO3 film indicates a fully relaxed and phase pure film. The observed orientation of MgO using SrTiO3 buffer layers is MgO∥SrTiO3∥.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Electrical and Electronic Engineering
- Materials Chemistry