Integration of MgO on Si(001) using SrO and SrTiO3 buffer layers by molecular beam epitaxy

F. Niu, A. Meier*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Epitaxial MgO was deposited onto Si(001) substrates by molecular beam epitaxy using elemental metallic sources and molecular oxygen at temperatures from 150 to 400°C. To facilitate epitaxy through misfit strain relaxation, epitaxial MgO layers were grown on SrO and SrTiO3 buffer layers deposited on Si(001) substrates. The structure of the epitaxial layers was determined by X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy. The observed orientation for the MgO/SrO/Si multilayer is cube-on-cube. The X-ray rocking curve full width half maximum of the MgO on SrO buffer layers was 2.2°. SrTiO3 buffer layers grown by recrystallization were epitaxial and exhibited improved morphology relative to those grown at a fixed growth temperature. X-ray analysis of a 5.2 nm recrystallized SrTiO3 film indicates a fully relaxed and phase pure film. The observed orientation of MgO using SrTiO3 buffer layers is MgO[100]∥SrTiO3[100]∥[110].

Original languageEnglish (US)
Pages (from-to)149-154
Number of pages6
JournalJournal of Electroceramics
Volume13
Issue number1-3
DOIs
StatePublished - Jul 2004

Keywords

  • Epitaxy
  • MgO
  • Si
  • SrO
  • SrTiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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