Intensity-dependent reflectance and transmittance of semiconductor periodic structures

Lukasz Brzozowski*, Vladimir Sukhovatkin, Edward Ted H. Sargent, Anthony J. Spring Thorpe, Marcius Extavour

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The intensity-dependent response of nonlinear Bragg-periodic epitaxially-grown InGaAs-InAlGaAs-based optical elements is reported over a broad spectral range 1.3-1.6 μm. Large changes in the transmittance and reflectance are observed as a function of incident power. Over most of this spectral region, the nonlinear response is dominated by the saturation of absorption. In the vicinity of 1.5 μm, the optical elements exhibit fluence-dependent Bragg diffraction. For low incident powers, the indices of refraction of structures are uniform and no coherent scattering takes place. With increased incident power a Bragg grating appears, resulting in the emergence of a fluence-dependent stopband in the transmittance and reflectance spectra.

Original languageEnglish (US)
Pages (from-to)924-930
Number of pages7
JournalIEEE Journal of Quantum Electronics
Issue number7
StatePublished - Jul 2003


  • All-optical elements
  • Kerr nonlinearity
  • Nonlinear optics
  • Nonlinear-periodic structures
  • Saturation of absorption
  • Semiconductor multi-quantum-wells

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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