TY - JOUR
T1 - Intensity-dependent reflectance and transmittance of semiconductor periodic structures
AU - Brzozowski, Lukasz
AU - Sukhovatkin, Vladimir
AU - Sargent, Edward Ted H.
AU - Spring Thorpe, Anthony J.
AU - Extavour, Marcius
N1 - Funding Information:
Manuscript received November 21, 2002; revised March 5, 2003. This work was supported by Nortel Networks and by the Natural Sciences and Engineering Research Council of Canada.
PY - 2003/7
Y1 - 2003/7
N2 - The intensity-dependent response of nonlinear Bragg-periodic epitaxially-grown InGaAs-InAlGaAs-based optical elements is reported over a broad spectral range 1.3-1.6 μm. Large changes in the transmittance and reflectance are observed as a function of incident power. Over most of this spectral region, the nonlinear response is dominated by the saturation of absorption. In the vicinity of 1.5 μm, the optical elements exhibit fluence-dependent Bragg diffraction. For low incident powers, the indices of refraction of structures are uniform and no coherent scattering takes place. With increased incident power a Bragg grating appears, resulting in the emergence of a fluence-dependent stopband in the transmittance and reflectance spectra.
AB - The intensity-dependent response of nonlinear Bragg-periodic epitaxially-grown InGaAs-InAlGaAs-based optical elements is reported over a broad spectral range 1.3-1.6 μm. Large changes in the transmittance and reflectance are observed as a function of incident power. Over most of this spectral region, the nonlinear response is dominated by the saturation of absorption. In the vicinity of 1.5 μm, the optical elements exhibit fluence-dependent Bragg diffraction. For low incident powers, the indices of refraction of structures are uniform and no coherent scattering takes place. With increased incident power a Bragg grating appears, resulting in the emergence of a fluence-dependent stopband in the transmittance and reflectance spectra.
KW - All-optical elements
KW - Kerr nonlinearity
KW - Nonlinear optics
KW - Nonlinear-periodic structures
KW - Saturation of absorption
KW - Semiconductor multi-quantum-wells
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U2 - 10.1109/JQE.2003.813195
DO - 10.1109/JQE.2003.813195
M3 - Article
AN - SCOPUS:0038444316
SN - 0018-9197
VL - 39
SP - 924
EP - 930
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 7
ER -