Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice

D. C. Rogers; R. J. Nicholas; J. C. Portal; M. Razeghi

doi:10.1088/0268-1242/1/6/003

Inter-band magneto-absorption in a Ga_0.3In_0.7As-InP strained layer superlattice

D. C. Rogers^*, R. J. Nicholas, J. C. Portal, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The inter-band optical absorption of a Ga_xIn_1-xAs-InP superlattice has been studied in magnetic fields up to 16 T. From the band gap of the sample, the alloy composition in the Ga_xIn_1-xAs layers is found to be x=0.32, giving a lattice mismatch of 1.1% and a splitting of 75 meV between the heavy hole (m_J=+or-³/₂) and light hole (m_J=+or-¹/₂) band edges. Transitions have been observed between the Landau levels of the N=1 electron and heavy hole sub-bands at energies up to 250 meV above the band edge. Comparison with cyclotron resonance measurements on the same sample shows that the N=1 heavy hole sub-band is highly non-parabolic, and this is compared with theoretical predictions.

Original language	English (US)
Article number	003
Pages (from-to)	350-353
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	1
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/1/6/003
State	Published - Dec 1 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/1/6/003

Cite this

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title = "Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice",

abstract = "The inter-band optical absorption of a GaxIn1-xAs-InP superlattice has been studied in magnetic fields up to 16 T. From the band gap of the sample, the alloy composition in the GaxIn1-xAs layers is found to be x=0.32, giving a lattice mismatch of 1.1% and a splitting of 75 meV between the heavy hole (mJ=+or-3/2) and light hole (mJ=+or-1/2) band edges. Transitions have been observed between the Landau levels of the N=1 electron and heavy hole sub-bands at energies up to 250 meV above the band edge. Comparison with cyclotron resonance measurements on the same sample shows that the N=1 heavy hole sub-band is highly non-parabolic, and this is compared with theoretical predictions.",

author = "Rogers, {D. C.} and Nicholas, {R. J.} and Portal, {J. C.} and M. Razeghi",

year = "1986",

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T1 - Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice

AU - Rogers, D. C.

AU - Nicholas, R. J.

AU - Portal, J. C.

AU - Razeghi, M.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The inter-band optical absorption of a GaxIn1-xAs-InP superlattice has been studied in magnetic fields up to 16 T. From the band gap of the sample, the alloy composition in the GaxIn1-xAs layers is found to be x=0.32, giving a lattice mismatch of 1.1% and a splitting of 75 meV between the heavy hole (mJ=+or-3/2) and light hole (mJ=+or-1/2) band edges. Transitions have been observed between the Landau levels of the N=1 electron and heavy hole sub-bands at energies up to 250 meV above the band edge. Comparison with cyclotron resonance measurements on the same sample shows that the N=1 heavy hole sub-band is highly non-parabolic, and this is compared with theoretical predictions.

AB - The inter-band optical absorption of a GaxIn1-xAs-InP superlattice has been studied in magnetic fields up to 16 T. From the band gap of the sample, the alloy composition in the GaxIn1-xAs layers is found to be x=0.32, giving a lattice mismatch of 1.1% and a splitting of 75 meV between the heavy hole (mJ=+or-3/2) and light hole (mJ=+or-1/2) band edges. Transitions have been observed between the Landau levels of the N=1 electron and heavy hole sub-bands at energies up to 250 meV above the band edge. Comparison with cyclotron resonance measurements on the same sample shows that the N=1 heavy hole sub-band is highly non-parabolic, and this is compared with theoretical predictions.

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Inter-band magneto-absorption in a Ga_0.3In_0.7As-InP strained layer superlattice

Abstract

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