Interaction of organic surfaces with active species in the high-vacuum environment

V. Podzorov, E. Menard, S. Pereversev, B. Yakshinsky, T. Madey, J. A. Rogers, M. E. Gershenson

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents, we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy Ea ∼2.5 eV (240 kJmol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices.

Original languageEnglish (US)
Article number093505
JournalApplied Physics Letters
Issue number9
StatePublished - Aug 29 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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