Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation

M. A. Bradley; F. H. Julien; J. P. Gilles; Y. Gao; E. V K Rao; M. Razeghi; F. Omnes

doi:10.1049/el:19900140

Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation

M. A. Bradley, F. H. Julien, J. P. Gilles, Y. Gao, E. V K Rao, M. Razeghi, F. Omnes

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Germanium implantation of InGaAs/lnP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.

Original language	English (US)
Pages (from-to)	208-210
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1049/el:19900140
State	Published - Jan 1990

Keywords

Optoelectronic
Semiconductor doping
Semiconductors (III-V)

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900140

Cite this

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title = "Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation",

abstract = "Germanium implantation of InGaAs/lnP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.",

keywords = "Optoelectronic, Semiconductor doping, Semiconductors (III-V)",

author = "Bradley, {M. A.} and Julien, {F. H.} and Gilles, {J. P.} and Y. Gao and Rao, {E. V K} and M. Razeghi and F. Omnes",

year = "1990",

month = jan,

doi = "10.1049/el:19900140",

language = "English (US)",

volume = "26",

pages = "208--210",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

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T1 - Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation

AU - Bradley, M. A.

AU - Julien, F. H.

AU - Gilles, J. P.

AU - Gao, Y.

AU - Rao, E. V K

AU - Razeghi, M.

AU - Omnes, F.

PY - 1990/1

Y1 - 1990/1

N2 - Germanium implantation of InGaAs/lnP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.

AB - Germanium implantation of InGaAs/lnP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.

KW - Optoelectronic

KW - Semiconductor doping

KW - Semiconductors (III-V)

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UR - http://www.scopus.com/inward/citedby.url?scp=0025388233&partnerID=8YFLogxK

U2 - 10.1049/el:19900140

DO - 10.1049/el:19900140

M3 - Article

AN - SCOPUS:0025388233

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EP - 210

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation

Abstract

Keywords

ASJC Scopus subject areas

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