Abstract
Germanium implantation of InGaAs/lnP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.
Original language | English (US) |
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Pages (from-to) | 208-210 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 26 |
Issue number | 3 |
DOIs | |
State | Published - Jan 1990 |
Keywords
- Optoelectronic
- Semiconductor doping
- Semiconductors (III-V)
ASJC Scopus subject areas
- Electrical and Electronic Engineering