Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation

M. A. Bradley, F. H. Julien, J. P. Gilles, Y. Gao, E. V K Rao, M. Razeghi, F. Omnes

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Germanium implantation of InGaAs/lnP quantum wells results in both column III and column V interdiffusion. Secondary ion mass spectroscopy and low-temperature photoluminescence indicate a lattice-matched composition and show column V interdiffusion deep in the structure attributed to fast-diffusing implantation defects.

Original languageEnglish (US)
Pages (from-to)208-210
Number of pages3
JournalElectronics Letters
Issue number3
StatePublished - Jan 1990


  • Optoelectronic
  • Semiconductor doping
  • Semiconductors (III-V)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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