Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions

D. Ozkaya; R. E. Dunin-Borkowski; A. K. Petford-Long; P. K. Wong; M. G. Blamire

doi:10.1063/1.373294

Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions

D. Ozkaya^*, R. E. Dunin-Borkowski, A. K. Petford-Long, P. K. Wong, M. G. Blamire

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

Nb/Fe/Al₂O₃/CoFe/Nb spin-tunnel junctions fabricated using a multiple oxidation technique have been characterized using high spatial resolution electron microscopy techniques. Junction magnetoresistance values up to 6.2% at room temperature and 9.2% at 77 K were obtained for junctions fabricated using this technique. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy were used to study the chemistry and interface structure of the barrier layer; elemental mapping showed the degree of chemical homogeneity across the layers and high spatial resolution electron energy loss spectroscopy revealed changes in the oxidation state and d-shell occupancies of Fe and Co across the layers, which need to be considered when modelling the spin-tunneling effect. Pinholes across the barrier were also observed by high resolution electron microscopy.

Original language	English (US)
Pages (from-to)	5200-5202
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	9 II
DOIs	https://doi.org/10.1063/1.373294
State	Published - May 2000
Event	44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States Duration: Nov 15 1999 → Nov 18 1999

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.373294

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title = "Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions",

abstract = "Nb/Fe/Al2O3/CoFe/Nb spin-tunnel junctions fabricated using a multiple oxidation technique have been characterized using high spatial resolution electron microscopy techniques. Junction magnetoresistance values up to 6.2% at room temperature and 9.2% at 77 K were obtained for junctions fabricated using this technique. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy were used to study the chemistry and interface structure of the barrier layer; elemental mapping showed the degree of chemical homogeneity across the layers and high spatial resolution electron energy loss spectroscopy revealed changes in the oxidation state and d-shell occupancies of Fe and Co across the layers, which need to be considered when modelling the spin-tunneling effect. Pinholes across the barrier were also observed by high resolution electron microscopy.",

author = "D. Ozkaya and Dunin-Borkowski, {R. E.} and Petford-Long, {A. K.} and Wong, {P. K.} and Blamire, {M. G.}",

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pages = "5200--5202",

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note = "44th Annual Conference on Magnetism and Magnetic Materials ; Conference date: 15-11-1999 Through 18-11-1999",

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TY - JOUR

T1 - Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions

AU - Ozkaya, D.

AU - Dunin-Borkowski, R. E.

AU - Petford-Long, A. K.

AU - Wong, P. K.

AU - Blamire, M. G.

PY - 2000/5

Y1 - 2000/5

N2 - Nb/Fe/Al2O3/CoFe/Nb spin-tunnel junctions fabricated using a multiple oxidation technique have been characterized using high spatial resolution electron microscopy techniques. Junction magnetoresistance values up to 6.2% at room temperature and 9.2% at 77 K were obtained for junctions fabricated using this technique. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy were used to study the chemistry and interface structure of the barrier layer; elemental mapping showed the degree of chemical homogeneity across the layers and high spatial resolution electron energy loss spectroscopy revealed changes in the oxidation state and d-shell occupancies of Fe and Co across the layers, which need to be considered when modelling the spin-tunneling effect. Pinholes across the barrier were also observed by high resolution electron microscopy.

AB - Nb/Fe/Al2O3/CoFe/Nb spin-tunnel junctions fabricated using a multiple oxidation technique have been characterized using high spatial resolution electron microscopy techniques. Junction magnetoresistance values up to 6.2% at room temperature and 9.2% at 77 K were obtained for junctions fabricated using this technique. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy were used to study the chemistry and interface structure of the barrier layer; elemental mapping showed the degree of chemical homogeneity across the layers and high spatial resolution electron energy loss spectroscopy revealed changes in the oxidation state and d-shell occupancies of Fe and Co across the layers, which need to be considered when modelling the spin-tunneling effect. Pinholes across the barrier were also observed by high resolution electron microscopy.

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Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions

Abstract

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