Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions

D. Ozkaya*, R. E. Dunin-Borkowski, A. K. Petford-Long, P. K. Wong, M. G. Blamire

*Corresponding author for this work

Research output: Contribution to journalConference article

15 Scopus citations

Abstract

Nb/Fe/Al2O3/CoFe/Nb spin-tunnel junctions fabricated using a multiple oxidation technique have been characterized using high spatial resolution electron microscopy techniques. Junction magnetoresistance values up to 6.2% at room temperature and 9.2% at 77 K were obtained for junctions fabricated using this technique. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy were used to study the chemistry and interface structure of the barrier layer; elemental mapping showed the degree of chemical homogeneity across the layers and high spatial resolution electron energy loss spectroscopy revealed changes in the oxidation state and d-shell occupancies of Fe and Co across the layers, which need to be considered when modelling the spin-tunneling effect. Pinholes across the barrier were also observed by high resolution electron microscopy.

Original languageEnglish (US)
Pages (from-to)5200-5202
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9 II
DOIs
StatePublished - May 2000
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: Nov 15 1999Nov 18 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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