Interface engineering in organic thin film transistors

R. Liguori; S. Fusco; A. Rubino; H. Usta; A. Facchetti

doi:10.1109/SMICND.2017.8101182

Interface engineering in organic thin film transistors

R. Liguori, S. Fusco, A. Rubino, H. Usta, A. Facchetti

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.

Original language	English (US)
Title of host publication	2017 40th International Semiconductor Conference, CAS 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	143-146
Number of pages	4
ISBN (Electronic)	9781509039852
DOIs	https://doi.org/10.1109/SMICND.2017.8101182
State	Published - Nov 7 2017
Event	40th International Semiconductor Conference, CAS 2017 - Sinaia, Romania Duration: Oct 11 2017 → Oct 14 2017

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	2017-October

Conference

Conference	40th International Semiconductor Conference, CAS 2017
Country/Territory	Romania
City	Sinaia
Period	10/11/17 → 10/14/17

Keywords

organic thin-film transistors (OTFTs)
semiconductor-insulator interfaces
semiconductor-metal interfaces
trap-limited charge transport

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SMICND.2017.8101182

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Liguori, R., Fusco, S., Rubino, A., Usta, H., & Facchetti, A. (2017). Interface engineering in organic thin film transistors. In 2017 40th International Semiconductor Conference, CAS 2017 - Proceedings (pp. 143-146). [8101182] (Proceedings of the International Semiconductor Conference, CAS; Vol. 2017-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMICND.2017.8101182

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title = "Interface engineering in organic thin film transistors",

abstract = "A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.",

keywords = "organic thin-film transistors (OTFTs), semiconductor-insulator interfaces, semiconductor-metal interfaces, trap-limited charge transport",

author = "R. Liguori and S. Fusco and A. Rubino and H. Usta and A. Facchetti",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 40th International Semiconductor Conference, CAS 2017 ; Conference date: 11-10-2017 Through 14-10-2017",

year = "2017",

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doi = "10.1109/SMICND.2017.8101182",

language = "English (US)",

series = "Proceedings of the International Semiconductor Conference, CAS",

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Liguori, R, Fusco, S, Rubino, A, Usta, H & Facchetti, A 2017, Interface engineering in organic thin film transistors. in 2017 40th International Semiconductor Conference, CAS 2017 - Proceedings., 8101182, Proceedings of the International Semiconductor Conference, CAS, vol. 2017-October, Institute of Electrical and Electronics Engineers Inc., pp. 143-146, 40th International Semiconductor Conference, CAS 2017, Sinaia, Romania, 10/11/17. https://doi.org/10.1109/SMICND.2017.8101182

Interface engineering in organic thin film transistors. / Liguori, R.; Fusco, S.; Rubino, A. et al.

2017 40th International Semiconductor Conference, CAS 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 143-146 8101182 (Proceedings of the International Semiconductor Conference, CAS; Vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Interface engineering in organic thin film transistors

AU - Liguori, R.

AU - Fusco, S.

AU - Rubino, A.

AU - Usta, H.

AU - Facchetti, A.

PY - 2017/11/7

Y1 - 2017/11/7

N2 - A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.

AB - A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.

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KW - semiconductor-insulator interfaces

KW - semiconductor-metal interfaces

KW - trap-limited charge transport

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T3 - Proceedings of the International Semiconductor Conference, CAS

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BT - 2017 40th International Semiconductor Conference, CAS 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Interface engineering in organic thin film transistors

Abstract

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Keywords

ASJC Scopus subject areas

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