TY - JOUR
T1 - Interface Engineering with Polystyrene for High-Performance, Low-Voltage Driven Organic Thin Film Transistor
AU - Hasan, Md Mehedi
AU - Islam, Md Mobaidul
AU - Li, Xiuling
AU - He, Mingqian
AU - Manley, Robert
AU - Chang, Jaemyung
AU - Zhelev, Nikolay
AU - Mehrotra, Karan
AU - Jang, Jin
N1 - Funding Information:
Manuscript received January 20, 2020; revised February 11, 2020; accepted February 16, 2020. Date of publication March 12, 2020; date of current version March 24, 2020. This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE) under Grant 10052044 and in part by the Korea Display Research Corporation (KDRC) Support Program for the development of future devices technology for display industry. The review of this article was arranged by Editor H. Klauk. (Corresponding author: Jin Jang.) Md. Mehedi Hasan, Md. Mobaidul Islam, Xiuling Li, and Jin Jang are with the Advanced Display Research Center, Kyung Hee University, Seoul 02447, South Korea, and also with the Department of Information Display, Kyung Hee University, Seoul 02447, South Korea (e-mail: mehedi@tft.khu.ac.kr; jjang@khu.ac.kr).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - We report a solution-processed, high-performance organic thin-film transistor (OTFT), using polystyrene (PS) as interlayer with the semiconducting material P2TDPP2TFT4 as an active layer. We achieved a significant improvement employing the PS as an interlayer between the P2TDPP2TFT4 and {{{\text {AlO}}}}_{X} gate insulator. The filed-effect mobility ( \mu _{{{\text {FE}}}} ) and ON/OFF current ratio {(}{I}_{{ \mathrm{\scriptscriptstyle ON}}}/{I}_{{ \mathrm{\scriptscriptstyle OFF}}}{)} reached to 0.82\,\,{{{\text {cm}}}}^{{{{2}}}}{\cdot } {{\text {V}}}^{{{-{1}}}}{\cdot } {{\text {s}}}^{{{-{1}}}} and 105, respectively, which is higher than the devices fabricated with commonly used self-assembled monolayer (SAM) octadecyltrimethoxysilane (OTS) modified substrate under similar experimental conditions. Further analysis of the modified gate insulator utilizing atomic force microscopy, X-ray diffraction, and contact angle measurement revealed that smoother surface and lower surface energy were achieved by employing PS interlayer, which leads to more compatible surface energy with the semiconductor and interfacial trap passivation. Passivation of interfacial traps and lower surface energy using PS interlayer leads to the highly stable device performance, suggesting its application as a new interlayer with {{{\text {AlO}}}}_{X} gate insulator to improve device performance.
AB - We report a solution-processed, high-performance organic thin-film transistor (OTFT), using polystyrene (PS) as interlayer with the semiconducting material P2TDPP2TFT4 as an active layer. We achieved a significant improvement employing the PS as an interlayer between the P2TDPP2TFT4 and {{{\text {AlO}}}}_{X} gate insulator. The filed-effect mobility ( \mu _{{{\text {FE}}}} ) and ON/OFF current ratio {(}{I}_{{ \mathrm{\scriptscriptstyle ON}}}/{I}_{{ \mathrm{\scriptscriptstyle OFF}}}{)} reached to 0.82\,\,{{{\text {cm}}}}^{{{{2}}}}{\cdot } {{\text {V}}}^{{{-{1}}}}{\cdot } {{\text {s}}}^{{{-{1}}}} and 105, respectively, which is higher than the devices fabricated with commonly used self-assembled monolayer (SAM) octadecyltrimethoxysilane (OTS) modified substrate under similar experimental conditions. Further analysis of the modified gate insulator utilizing atomic force microscopy, X-ray diffraction, and contact angle measurement revealed that smoother surface and lower surface energy were achieved by employing PS interlayer, which leads to more compatible surface energy with the semiconductor and interfacial trap passivation. Passivation of interfacial traps and lower surface energy using PS interlayer leads to the highly stable device performance, suggesting its application as a new interlayer with {{{\text {AlO}}}}_{X} gate insulator to improve device performance.
KW - Interlayer
KW - Octadecyltrimethoxysilane (OTS)
KW - Organic semiconductor
KW - Polystyrene (PS)
KW - Thin-film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=85082876896&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85082876896&partnerID=8YFLogxK
U2 - 10.1109/TED.2020.2974980
DO - 10.1109/TED.2020.2974980
M3 - Article
AN - SCOPUS:85082876896
VL - 67
SP - 1751
EP - 1756
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
M1 - 9034506
ER -