Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices

H. Mohseni, V. Litvinov, M. Razeghi

Research output: Contribution to journalArticlepeer-review

114 Scopus citations

Abstract

The temperature dependence of the nonequilibrium carriers lifetime has been deduced from the measurement of the photocurrent response in InAs/GaSb superlattices. Based on the temperature dependence of the responsivity and modeling of the transport parameters we have found that the carrier lifetime weakly depends on temperature in the high-temperature region. This indicates the temperature dependence of the Auger recombination rate with no threshold that differs it from that in the bulk material and can be attributed to the interface-induced suppression of the Auger recombination in thin quantum wells.

Original languageEnglish (US)
Pages (from-to)15378-15380
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number23
DOIs
StatePublished - 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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