Interface recombination in depleted heterojunction photovoltaics based on colloidal quantum dots

Kyle W. Kemp; Andre J. Labelle; Susanna M. Thon; Alexander H. Ip; Illan J. Kramer; Sjoerd Hoogland; Edward H. Sargent

doi:10.1002/aenm.201201083

Interface recombination in depleted heterojunction photovoltaics based on colloidal quantum dots

Kyle W. Kemp^*, Andre J. Labelle, Susanna M. Thon, Alexander H. Ip, Illan J. Kramer, Sjoerd Hoogland, Edward H. Sargent

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

110 Scopus citations

Abstract

Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO₂ -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.

Original language	English (US)
Pages (from-to)	917-922
Number of pages	6
Journal	Advanced Energy Materials
Volume	3
Issue number	7
DOIs	https://doi.org/10.1002/aenm.201201083
State	Published - Jul 2013

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Materials Science(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/aenm.201201083

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title = "Interface recombination in depleted heterojunction photovoltaics based on colloidal quantum dots",

abstract = "Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.",

author = "Kemp, {Kyle W.} and Labelle, {Andre J.} and Thon, {Susanna M.} and Ip, {Alexander H.} and Kramer, {Illan J.} and Sjoerd Hoogland and Sargent, {Edward H.}",

year = "2013",

month = jul,

doi = "10.1002/aenm.201201083",

language = "English (US)",

volume = "3",

pages = "917--922",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - Interface recombination in depleted heterojunction photovoltaics based on colloidal quantum dots

AU - Kemp, Kyle W.

AU - Labelle, Andre J.

AU - Thon, Susanna M.

AU - Ip, Alexander H.

AU - Kramer, Illan J.

AU - Hoogland, Sjoerd

AU - Sargent, Edward H.

PY - 2013/7

Y1 - 2013/7

N2 - Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.

AB - Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.

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M3 - Article

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VL - 3

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EP - 922

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 7

ER -

Interface recombination in depleted heterojunction photovoltaics based on colloidal quantum dots

Abstract

ASJC Scopus subject areas

UN SDGs

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