Interface roughness scattering in thin quantum wells

S. Elhamri, M. Ahoujja, R. Hudgins, D. B. Mast, R. S. Newrock, W. C. Mitchel, M. Razeghi, M. Erdtmann

Research output: Contribution to journalArticle

6 Scopus citations


Electronic transport coefficients of very thin undoped GaInP/GaAs quantum wells have been measured at low temperatures by the low field Hall effect and by the Shubnikov-de Haas effect. Unlike the case in undoped AlGaAs/GaAs, strong Shubnikov-de Haas oscillations were observed in this structure after increasing the carrier concentration via the persistent photoconductivity effect. Low temperature mobilities close to 70000 cm2 V-1 s-1 at a carrier concentration of 6.5 × 1011 cm-2 were observed in a 25 angstrom quantum well. The results are compared with the theory of interface roughness scattering and we find that the mobility of our samples goes as L1.3 where L is the well width. We conclude that the barrier height of the confining potential plays a very important role in determining the effect of interface roughness scattering on the mobility of very thin quantum wells.

Original languageEnglish (US)
Pages (from-to)75-81
Number of pages7
JournalSuperlattices and Microstructures
Issue number1
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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