Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm-2 were observed in a 20 Å quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)