Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

W. C. Mitchel; G. J. Brown; Ikai Lo; Said Elhamri; Mohamed Ahoujja; K. Ravindran; R. S. Newrock; Manijeh Razeghi; Xiaguang He

doi:10.1063/1.112920

Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

W. C. Mitchel^*, G. J. Brown, Ikai Lo, Said Elhamri, Mohamed Ahoujja, K. Ravindran, R. S. Newrock, Manijeh Razeghi, Xiaguang He

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm²/V s at carrier concentrations of 6.5×10¹¹ cm^-2 were observed in a 20 Å quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.

Original language	English (US)
Pages (from-to)	1578-1580
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	12
DOIs	https://doi.org/10.1063/1.112920
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{21e15b83ff474d7abbca0cad386f1dfd,

title = "Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells",

abstract = "Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm-2 were observed in a 20 {\AA} quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.",

author = "Mitchel, {W. C.} and Brown, {G. J.} and Ikai Lo and Said Elhamri and Mohamed Ahoujja and K. Ravindran and Newrock, {R. S.} and Manijeh Razeghi and Xiaguang He",

year = "1994",

doi = "10.1063/1.112920",

language = "English (US)",

volume = "65",

pages = "1578--1580",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

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TY - JOUR

T1 - Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

AU - Mitchel, W. C.

AU - Brown, G. J.

AU - Lo, Ikai

AU - Elhamri, Said

AU - Ahoujja, Mohamed

AU - Ravindran, K.

AU - Newrock, R. S.

AU - Razeghi, Manijeh

AU - He, Xiaguang

PY - 1994

Y1 - 1994

N2 - Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm-2 were observed in a 20 Å quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.

AB - Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm-2 were observed in a 20 Å quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.

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U2 - 10.1063/1.112920

DO - 10.1063/1.112920

M3 - Article

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SN - 0003-6951

VL - 65

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EP - 1580

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

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