Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

W. C. Mitchel*, G. J. Brown, Ikai Lo, Said Elhamri, Mohamed Ahoujja, K. Ravindran, R. S. Newrock, Manijeh Razeghi, Xiaguang He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm-2 were observed in a 20 Å quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.

Original languageEnglish (US)
Pages (from-to)1578-1580
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells'. Together they form a unique fingerprint.

Cite this