Abstract
We report cross-sectional high resolution transmission electron microscopy studies of the interface structure in Bi/CdTe and Bi/Bi1-x Sbx superlattice films deposited on (111) CdTe by molecular beam epitaxy. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and two-dimensional growth.
Original language | English (US) |
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Pages (from-to) | 1255-1259 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 23 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1994 |
Keywords
- Bi/BiSb
- Bi/CdTe
- interfaces
- superlattice films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry