Interface structure between Bi and CdTe in molecular beam epitaxially Grown Bi/CdTe and Bi/Bi1-xSbx superlattices

J. Chen; A. di Venere; X. J. Yi; C. L. Hou; H. C. Wang; G. K. Wong; J. B. Ketterson

doi:10.1007/BF02649887

Interface structure between Bi and CdTe in molecular beam epitaxially Grown Bi/CdTe and Bi/Bi_1-xSb_x superlattices

J. Chen^*, A. di Venere, X. J. Yi, C. L. Hou, H. C. Wang, G. K. Wong, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report cross-sectional high resolution transmission electron microscopy studies of the interface structure in Bi/CdTe and Bi/Bi_1-x Sb_x superlattice films deposited on (111) CdTe by molecular beam epitaxy. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and two-dimensional growth.

Original language	English (US)
Pages (from-to)	1255-1259
Number of pages	5
Journal	Journal of Electronic Materials
Volume	23
Issue number	12
DOIs	https://doi.org/10.1007/BF02649887
State	Published - Dec 1994

Keywords

Bi/BiSb
Bi/CdTe
interfaces
superlattice films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/BF02649887

Cite this

@article{941328566c7d4fffb4a7f6d50a1485de,

title = "Interface structure between Bi and CdTe in molecular beam epitaxially Grown Bi/CdTe and Bi/Bi1-xSbx superlattices",

abstract = "We report cross-sectional high resolution transmission electron microscopy studies of the interface structure in Bi/CdTe and Bi/Bi1-x Sbx superlattice films deposited on (111) CdTe by molecular beam epitaxy. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and two-dimensional growth.",

keywords = "Bi/BiSb, Bi/CdTe, interfaces, superlattice films",

author = "J. Chen and {di Venere}, A. and Yi, {X. J.} and Hou, {C. L.} and Wang, {H. C.} and Wong, {G. K.} and Ketterson, {J. B.}",

year = "1994",

month = dec,

doi = "10.1007/BF02649887",

language = "English (US)",

volume = "23",

pages = "1255--1259",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}

TY - JOUR

T1 - Interface structure between Bi and CdTe in molecular beam epitaxially Grown Bi/CdTe and Bi/Bi1-xSbx superlattices

AU - Chen, J.

AU - di Venere, A.

AU - Yi, X. J.

AU - Hou, C. L.

AU - Wang, H. C.

AU - Wong, G. K.

AU - Ketterson, J. B.

PY - 1994/12

Y1 - 1994/12

N2 - We report cross-sectional high resolution transmission electron microscopy studies of the interface structure in Bi/CdTe and Bi/Bi1-x Sbx superlattice films deposited on (111) CdTe by molecular beam epitaxy. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and two-dimensional growth.

AB - We report cross-sectional high resolution transmission electron microscopy studies of the interface structure in Bi/CdTe and Bi/Bi1-x Sbx superlattice films deposited on (111) CdTe by molecular beam epitaxy. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and two-dimensional growth.

KW - Bi/BiSb

KW - Bi/CdTe

KW - interfaces

KW - superlattice films

UR - http://www.scopus.com/inward/record.url?scp=0028683496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028683496&partnerID=8YFLogxK

U2 - 10.1007/BF02649887

DO - 10.1007/BF02649887

M3 - Article

AN - SCOPUS:0028683496

VL - 23

SP - 1255

EP - 1259

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -