Interface structure between Bi and CdTe in molecular beam epitaxially Grown Bi/CdTe and Bi/Bi 1-x Sb x superlattices

J. Chen*, A. di Venere, X. J. Yi, C. L. Hou, H. C. Wang, G. K. Wong, John B Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We report cross-sectional high resolution transmission electron microscopy studies of the interface structure in Bi/CdTe and Bi/Bi 1-x Sb x superlattice films deposited on (111) CdTe by molecular beam epitaxy. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and two-dimensional growth.

Original languageEnglish (US)
Pages (from-to)1255-1259
Number of pages5
JournalJournal of Electronic Materials
Volume23
Issue number12
DOIs
StatePublished - Dec 1 1994

Keywords

  • Bi/BiSb
  • Bi/CdTe
  • interfaces
  • superlattice films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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