Interface structures in MgB 2 thin films on (0001) SiC

J. S. Wu*, N. Jiang, B. Jiang, J. C H Spence, A. V. Pogrebnyakov, J. M. Redwing, X. X. Xi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.

Original languageEnglish (US)
Pages (from-to)1155-1157
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - Aug 16 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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