The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Aug 16 2004|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)