Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

Xinming Zhuang, Wei Huang, Shijiao Han, Yiming Jiang, Huajing Zheng, Junsheng Yu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO2) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm2/Vs to 0.15 cm2/Vs by incorporating with MoOx interfacial layer. Moreover, when exposed to 30 ppm NO2, the saturation current and μ of OTFT with MoOx interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoOx contributes to better diffusion of NO2 molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.

Original languageEnglish (US)
Pages (from-to)334-339
Number of pages6
JournalOrganic Electronics
Volume49
DOIs
StatePublished - Oct 2017

Keywords

  • Gas sensor
  • Interfacial modifying layer
  • Nitrogen dioxide
  • Organic thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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