Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

Xinming Zhuang; Wei Huang; Shijiao Han; Yiming Jiang; Huajing Zheng; Junsheng Yu

doi:10.1016/j.orgel.2017.07.008

Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

Xinming Zhuang, Wei Huang, Shijiao Han, Yiming Jiang, Huajing Zheng, Junsheng Yu^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO₂) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm²/Vs to 0.15 cm²/Vs by incorporating with MoO_x interfacial layer. Moreover, when exposed to 30 ppm NO₂, the saturation current and μ of OTFT with MoO_x interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoO_x contributes to better diffusion of NO₂ molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.

Original language	English (US)
Pages (from-to)	334-339
Number of pages	6
Journal	Organic Electronics
Volume	49
DOIs	https://doi.org/10.1016/j.orgel.2017.07.008
State	Published - Oct 2017

Funding

The authors gratefully acknowledge the financial support from the Foundation for Innovation Research Groups of National Natural Science Foundation of China (NSFC) (Grant No. 61421002), the Foundation of NSFC (Grant No. 61675041), and Science and Technology Department of Sichuan Province (Grant Nos. 2016HH0027 & 2016FZ0100).

Keywords

Gas sensor
Interfacial modifying layer
Nitrogen dioxide
Organic thin-film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2017.07.008

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title = "Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors",

abstract = "Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO2) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm2/Vs to 0.15 cm2/Vs by incorporating with MoOx interfacial layer. Moreover, when exposed to 30 ppm NO2, the saturation current and μ of OTFT with MoOx interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoOx contributes to better diffusion of NO2 molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.",

keywords = "Gas sensor, Interfacial modifying layer, Nitrogen dioxide, Organic thin-film transistor",

author = "Xinming Zhuang and Wei Huang and Shijiao Han and Yiming Jiang and Huajing Zheng and Junsheng Yu",

note = "Funding Information: The authors gratefully acknowledge the financial support from the Foundation for Innovation Research Groups of National Natural Science Foundation of China (NSFC) (Grant No. 61421002), the Foundation of NSFC (Grant No. 61675041), and Science and Technology Department of Sichuan Province (Grant Nos. 2016HH0027 & 2016FZ0100). Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = oct,

doi = "10.1016/j.orgel.2017.07.008",

language = "English (US)",

volume = "49",

pages = "334--339",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

AU - Zhuang, Xinming

AU - Huang, Wei

AU - Han, Shijiao

AU - Jiang, Yiming

AU - Zheng, Huajing

AU - Yu, Junsheng

N1 - Funding Information: The authors gratefully acknowledge the financial support from the Foundation for Innovation Research Groups of National Natural Science Foundation of China (NSFC) (Grant No. 61421002), the Foundation of NSFC (Grant No. 61675041), and Science and Technology Department of Sichuan Province (Grant Nos. 2016HH0027 & 2016FZ0100). Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/10

Y1 - 2017/10

N2 - Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO2) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm2/Vs to 0.15 cm2/Vs by incorporating with MoOx interfacial layer. Moreover, when exposed to 30 ppm NO2, the saturation current and μ of OTFT with MoOx interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoOx contributes to better diffusion of NO2 molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.

AB - Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO2) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm2/Vs to 0.15 cm2/Vs by incorporating with MoOx interfacial layer. Moreover, when exposed to 30 ppm NO2, the saturation current and μ of OTFT with MoOx interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoOx contributes to better diffusion of NO2 molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.

KW - Gas sensor

KW - Interfacial modifying layer

KW - Nitrogen dioxide

KW - Organic thin-film transistor

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Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

Abstract

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Keywords

ASJC Scopus subject areas

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