Interfacial X-ray photospectrometry study of In0.53Ga 0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

M. F.Mohd Razip Wee, Arash Dehzangi, N. Wichmann, S. Bollaert, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this reported work, comparison is made of a passivation treatment of a 3-4 compound semiconductor using ammonia and ammonium sulphide solution. The treatment is applied on In0.53Ga0.47As which is chosen for its high mobility especially in high electron mobility transistors. The samples were treated with various parameters such as precursor, vacuum condition and different chemical solutions. Then, samples were deposited with the high k-dielectric Al2O3 (4 nm thickness) using the atomic layer deposition technique. Five different passivation treatments were used to give proper comparison. Native oxide elements and contaminants were inspected at the interface of the oxide layer and the substrate using X-ray photospectrometry in different angles (25° and 70°). The results indicate the effectiveness of some treatments to eliminate the oxide of gallium and arsenic with a slight presence of indium oxide.

Original languageEnglish (US)
Pages (from-to)836-840
Number of pages5
JournalMicro and Nano Letters
Volume8
Issue number11
DOIs
StatePublished - 2013

ASJC Scopus subject areas

  • Bioengineering
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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