Internal magnetic field in thin ZnSe epilayers

S. Ghosh*, N. P. Stern, B. Maertz, D. D. Awschalom, G. Xiang, M. Zhu, N. Samarth

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Strain-induced spin splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and X-ray diffraction measurements. The authors observe that the magnitude of the spin splitting increases with applied voltage and temperature and is highly crystal direction dependent, vanishing along [1 1- 0].

Original languageEnglish (US)
Article number242116
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
StatePublished - Dec 29 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ghosh, S., Stern, N. P., Maertz, B., Awschalom, D. D., Xiang, G., Zhu, M., & Samarth, N. (2006). Internal magnetic field in thin ZnSe epilayers. Applied Physics Letters, 89(24), [242116]. https://doi.org/10.1063/1.2404600