Internal operating mechanisms of OEIC-compatible lateral injection lasers: intrinsic differences from the vertical injection paradigm

Edward H. Sargent*, G. L. Tan, D. A. Suda, J. M. Xu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.

Original languageEnglish (US)
Pages (from-to)111-112
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - 1996
EventProceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr
Duration: Oct 13 1996Oct 18 1996

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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