Abstract
Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.
Original language | English (US) |
---|---|
Pages (from-to) | 111-112 |
Number of pages | 2 |
Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
State | Published - 1996 |
Event | Proceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr Duration: Oct 13 1996 → Oct 18 1996 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering