Internal stress around micropipes in 6H-SiC substrates

Hitoshi Ohsato*, Tomohisa Kato, Takashi Okuda, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


6H-SiC single crystals are expected to be suitable substrates for thin film growth of the wide bandgap semiconductor GaN, because it has a small lattice mismatch with GaN. Moreover, SiC single crystals are also expected for high-power and high-temperature electric applications because of its wide band gap, high breakdown voltage, high thermal conductivity and high temperature stability. Single crystals with large size used for electronic devices can be grown on seed crystals only by the modified Lely method based on sublimation deposition. But, single crystals have serious defects so called micropipes. These micropipes penetrate almost along the [001] direction. The internal strain around micropipes was investigated using the polarizing optical microscope for the purpose of clarifying the formation mechanisms and decreasing the amount of micropipes. A special interference figure was found around a micropipe under the crossed polars on the polarizing microscope. In this work, the special interference figure around micropipes due to internal stress was explained, and the magnitude and distribution of the stress was measured by means of photoelasticity and the mapping of Raman spectra.

Original languageEnglish (US)
Pages (from-to)393-399
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1999
EventProceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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