Interplay of topological surface and bulk electronic states in Bi 2Se3

Megan Romanowich*, Mal Soon Lee, Duck Young Chung, S. D. Mahanti, Mercouri G. Kanatzidis, Stuart H. Tessmer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this paper we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density-functional calculations using a slab model and analysis of the partial density of states show that the background is consistent with bulklike states with small amplitudes at the surface. The topological surface states coexist with bulklike states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulklike surface states.

Original languageEnglish (US)
Article number085310
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number8
StatePublished - Feb 15 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Interplay of topological surface and bulk electronic states in Bi 2Se3'. Together they form a unique fingerprint.

Cite this