P-doped GaAs-GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half-maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)