Intersubband hole absorption in GaAs-GaInP quantum wells grown by gas source molecular beam epitaxy

G. J. Brown*, S. M. Hegde, J. Hoff, C. Jelen, Steven Boyd Slivken, E. Michel, O. Duchemin, E. Bigan, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

P-doped GaAs-GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half-maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated.

Original languageEnglish (US)
Pages (from-to)1130-1132
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number9
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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