InTISb alloys for infrared detection

Erwan Bigan; Y. H. Choi; G. Labeyrie; Manijeh Razeghi

InTISb alloys for infrared detection

Erwan Bigan^*, Y. H. Choi, G. Labeyrie, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 10⁹ cm Hz^1/2 W^-1 at 7-μm operating wavelength.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Nasser Peygambarian, Henry Everitt, Robert C. Eckardt, Dennis D. Lowenthal
Publisher	Publ by Society of Photo-Optical Instrumentation Engineers
Pages	2-5
Number of pages	4
Volume	2145
ISBN (Print)	0819414409
State	Published - Dec 1 1994
Event	Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion - Los Angeles, CA, USA Duration: Jan 24 1994 → Jan 26 1994

Other

Other	Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion
City	Los Angeles, CA, USA
Period	1/24/94 → 1/26/94

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "InTISb alloys for infrared detection",

abstract = "InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 109 cm Hz 1/2 W-1 at 7-μm operating wavelength.",

author = "Erwan Bigan and Choi, {Y. H.} and G. Labeyrie and Manijeh Razeghi",

year = "1994",

month = dec,

day = "1",

language = "English (US)",

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volume = "2145",

pages = "2--5",

editor = "Nasser Peygambarian and Henry Everitt and Eckardt, {Robert C.} and Lowenthal, {Dennis D.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",

note = "Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion ; Conference date: 24-01-1994 Through 26-01-1994",

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Bigan, E, Choi, YH, Labeyrie, G & Razeghi, M 1994, InTISb alloys for infrared detection. in N Peygambarian, H Everitt, RC Eckardt & DD Lowenthal (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2145, Publ by Society of Photo-Optical Instrumentation Engineers, pp. 2-5, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, Los Angeles, CA, USA, 1/24/94.

InTISb alloys for infrared detection. / Bigan, Erwan; Choi, Y. H.; Labeyrie, G. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Nasser Peygambarian; Henry Everitt; Robert C. Eckardt; Dennis D. Lowenthal. Vol. 2145 Publ by Society of Photo-Optical Instrumentation Engineers, 1994. p. 2-5.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - InTISb alloys for infrared detection

AU - Bigan, Erwan

AU - Choi, Y. H.

AU - Labeyrie, G.

AU - Razeghi, Manijeh

PY - 1994/12/1

Y1 - 1994/12/1

N2 - InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 109 cm Hz 1/2 W-1 at 7-μm operating wavelength.

AB - InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 109 cm Hz 1/2 W-1 at 7-μm operating wavelength.

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M3 - Conference contribution

AN - SCOPUS:0028723503

SN - 0819414409

VL - 2145

SP - 2

EP - 5

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Peygambarian, Nasser

A2 - Everitt, Henry

A2 - Eckardt, Robert C.

A2 - Lowenthal, Dennis D.

PB - Publ by Society of Photo-Optical Instrumentation Engineers

T2 - Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion

Y2 - 24 January 1994 through 26 January 1994

ER -

InTISb alloys for infrared detection

Abstract

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ASJC Scopus subject areas

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