InTISb alloys for infrared detection

Erwan Bigan*, Y. H. Choi, G. Labeyrie, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 109 cm Hz 1/2 W-1 at 7-μm operating wavelength.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsNasser Peygambarian, Henry Everitt, Robert C. Eckardt, Dennis D. Lowenthal
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages2-5
Number of pages4
Volume2145
ISBN (Print)0819414409
StatePublished - Dec 1 1994
EventNonlinear Optics for High-Speed Electronics and Optical Frequency Conversion - Los Angeles, CA, USA
Duration: Jan 24 1994Jan 26 1994

Other

OtherNonlinear Optics for High-Speed Electronics and Optical Frequency Conversion
CityLos Angeles, CA, USA
Period1/24/941/26/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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