Intramolecular Locked Dithioalkylbithiophene-Based Semiconductors for High-Performance Organic Field-Effect Transistors

Sureshraju Vegiraju, Bo Chin Chang, Pragya Priyanka, Deng Yi Huang, Kuan Yi Wu, Long Huan Li, Wei Chieh Chang, Yi Yo Lai, Shao Huan Hong, Bo Chun Yu, Chien Lung Wang, Wen Jung Chang, Cheng Liang Liu*, Ming Chou Chen, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


New 3,3′-dithioalkyl-2,2′-bithiophene (SBT)-based small molecular and polymeric semiconductors are synthesized by end-capping or copolymerization with dithienothiophen-2-yl units. Single-crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)⋯S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′-dialkyl-2,2′-bithiophene, the resulting SBT systems are planar (torsional angle <1°) and highly π-conjugated. Charge transport is investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm2 V−1 s−1. Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X-ray diffraction experiments.

Original languageEnglish (US)
Article number1702414
JournalAdvanced Materials
Issue number35
StatePublished - Sep 20 2017


  • dithienothiophene
  • dithioalkylbithiophene
  • organic field-effect transistors
  • solution-shearing

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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