TY - GEN
T1 - Intrinsic AlxGa1-xN photodetectors for the entire compositional range
AU - Walker, Danielle
AU - Zhang, Xiaolong
AU - Saxler, Adam
AU - Kung, Patrick
AU - Xu, J.
AU - Razeghi, Manijeh
PY - 1997
Y1 - 1997
N2 - AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 108 cm × Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.
AB - AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 108 cm × Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.
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M3 - Conference contribution
AN - SCOPUS:0031384859
SN - 0819424102
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 267
EP - 274
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Brown, Gail J.
A2 - Razeghi, Manijeh
PB - Society of Photo-Optical Instrumentation Engineers
T2 - Photodetectors: Materials and Devices II
Y2 - 12 February 1997 through 14 February 1997
ER -