Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Danielle Walker; Xiaolong Zhang; Adam Saxler; Patrick Kung; J. Xu; Manijeh Razeghi

Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Danielle Walker^*, Xiaolong Zhang, Adam Saxler, Patrick Kung, J. Xu, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Al_xGa_1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 10⁸ cm × Hz^1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in Al_xGa_1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Gail J. Brown, Manijeh Razeghi
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	267-274
Number of pages	8
ISBN (Print)	0819424102
State	Published - Dec 1 1997
Event	Photodetectors: Materials and Devices II - San Jose, CA, USA Duration: Feb 12 1997 → Feb 14 1997

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2999
ISSN (Print)	0277-786X

Other

Other	Photodetectors: Materials and Devices II
City	San Jose, CA, USA
Period	2/12/97 → 2/14/97

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Intrinsic AlxGa1-xN photodetectors for the entire compositional range'. Together they form a unique fingerprint.

Cite this

Walker, D., Zhang, X., Saxler, A., Kung, P., Xu, J., & Razeghi, M. (1997). Intrinsic AlxGa1-xN photodetectors for the entire compositional range. In G. J. Brown, & M. Razeghi (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 267-274). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2999). Society of Photo-Optical Instrumentation Engineers.

Walker, Danielle ; Zhang, Xiaolong ; Saxler, Adam ; Kung, Patrick ; Xu, J. ; Razeghi, Manijeh. / Intrinsic AlxGa1-xN photodetectors for the entire compositional range. Proceedings of SPIE - The International Society for Optical Engineering. editor / Gail J. Brown ; Manijeh Razeghi. Society of Photo-Optical Instrumentation Engineers, 1997. pp. 267-274 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{76166834ac584d7985ff32aa1d8cdd5e,

title = "Intrinsic AlxGa1-xN photodetectors for the entire compositional range",

abstract = "AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 108 cm × Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.",

author = "Danielle Walker and Xiaolong Zhang and Adam Saxler and Patrick Kung and J. Xu and Manijeh Razeghi",

year = "1997",

month = dec,

day = "1",

language = "English (US)",

isbn = "0819424102",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

pages = "267--274",

editor = "Brown, {Gail J.} and Manijeh Razeghi",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Photodetectors: Materials and Devices II ; Conference date: 12-02-1997 Through 14-02-1997",

}

Walker, D, Zhang, X, Saxler, A, Kung, P, Xu, J & Razeghi, M 1997, Intrinsic AlxGa1-xN photodetectors for the entire compositional range. in GJ Brown & M Razeghi (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2999, Society of Photo-Optical Instrumentation Engineers, pp. 267-274, Photodetectors: Materials and Devices II, San Jose, CA, USA, 2/12/97.

Intrinsic AlxGa1-xN photodetectors for the entire compositional range. / Walker, Danielle; Zhang, Xiaolong; Saxler, Adam; Kung, Patrick; Xu, J.; Razeghi, Manijeh.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Gail J. Brown; Manijeh Razeghi. Society of Photo-Optical Instrumentation Engineers, 1997. p. 267-274 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Intrinsic AlxGa1-xN photodetectors for the entire compositional range

AU - Walker, Danielle

AU - Zhang, Xiaolong

AU - Saxler, Adam

AU - Kung, Patrick

AU - Xu, J.

AU - Razeghi, Manijeh

PY - 1997/12/1

Y1 - 1997/12/1

N2 - AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 108 cm × Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.

AB - AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 108 cm × Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.

UR - http://www.scopus.com/inward/record.url?scp=0031384859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031384859&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031384859

SN - 0819424102

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 267

EP - 274

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Brown, Gail J.

A2 - Razeghi, Manijeh

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Photodetectors: Materials and Devices II

Y2 - 12 February 1997 through 14 February 1997

ER -

Walker D, Zhang X, Saxler A, Kung P, Xu J, Razeghi M. Intrinsic AlxGa1-xN photodetectors for the entire compositional range. In Brown GJ, Razeghi M, editors, Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers. 1997. p. 267-274. (Proceedings of SPIE - The International Society for Optical Engineering).