Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Danielle Walker*, Xiaolong Zhang, Adam Saxler, Patrick Kung, J. Xu, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 × 108 cm × Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages267-274
Number of pages8
ISBN (Print)0819424102
StatePublished - Dec 1 1997
EventPhotodetectors: Materials and Devices II - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2999
ISSN (Print)0277-786X

Other

OtherPhotodetectors: Materials and Devices II
CitySan Jose, CA, USA
Period2/12/972/14/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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