Intrinsic charge transport on the surface of organic semiconductors

V. Podzorov; E. Menard; A. Borissov; V. Kiryukhin; J. A. Rogers; M. E. Gershenson

doi:10.1103/PhysRevLett.93.086602

Intrinsic charge transport on the surface of organic semiconductors

V. Podzorov^*, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, M. E. Gershenson

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1081 Scopus citations

Abstract

The observation of the intrinsic transport of field-induced charges on the surface of single crystals of rubrene (C₄₂H₂₈ was reported. It was shown than the air-gap field-effect technique enabled realization of the intrinsic polaronic transport on the surface of rubrene crystals over a wide range of temperatures. The observation of two signatures of the intrinsic transport - the mobility increases with decreasing temperature and the mobility anisotropy, in the temperature range ∼150-300 K, was presented. It was found that at lower temperatures, where the charge transport was dominated by shallow traps, μ decreases exponentially with cooling and its anisotropy vanishes.

Original language	English (US)
Article number	086602
Pages (from-to)	086602-1-086602-4
Journal	Physical review letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.93.086602
State	Published - Aug 20 2004

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.93.086602

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title = "Intrinsic charge transport on the surface of organic semiconductors",

abstract = "The observation of the intrinsic transport of field-induced charges on the surface of single crystals of rubrene (C42H28 was reported. It was shown than the air-gap field-effect technique enabled realization of the intrinsic polaronic transport on the surface of rubrene crystals over a wide range of temperatures. The observation of two signatures of the intrinsic transport - the mobility increases with decreasing temperature and the mobility anisotropy, in the temperature range ∼150-300 K, was presented. It was found that at lower temperatures, where the charge transport was dominated by shallow traps, μ decreases exponentially with cooling and its anisotropy vanishes.",

author = "V. Podzorov and E. Menard and A. Borissov and V. Kiryukhin and Rogers, {J. A.} and Gershenson, {M. E.}",

note = "Funding Information: This work at Rutgers was supported by the NSF Grants No. DMR-0405208 and No. ECS-0437932.",

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AU - Podzorov, V.

AU - Menard, E.

AU - Borissov, A.

AU - Kiryukhin, V.

AU - Rogers, J. A.

AU - Gershenson, M. E.

N1 - Funding Information: This work at Rutgers was supported by the NSF Grants No. DMR-0405208 and No. ECS-0437932.

PY - 2004/8/20

Y1 - 2004/8/20

N2 - The observation of the intrinsic transport of field-induced charges on the surface of single crystals of rubrene (C42H28 was reported. It was shown than the air-gap field-effect technique enabled realization of the intrinsic polaronic transport on the surface of rubrene crystals over a wide range of temperatures. The observation of two signatures of the intrinsic transport - the mobility increases with decreasing temperature and the mobility anisotropy, in the temperature range ∼150-300 K, was presented. It was found that at lower temperatures, where the charge transport was dominated by shallow traps, μ decreases exponentially with cooling and its anisotropy vanishes.

AB - The observation of the intrinsic transport of field-induced charges on the surface of single crystals of rubrene (C42H28 was reported. It was shown than the air-gap field-effect technique enabled realization of the intrinsic polaronic transport on the surface of rubrene crystals over a wide range of temperatures. The observation of two signatures of the intrinsic transport - the mobility increases with decreasing temperature and the mobility anisotropy, in the temperature range ∼150-300 K, was presented. It was found that at lower temperatures, where the charge transport was dominated by shallow traps, μ decreases exponentially with cooling and its anisotropy vanishes.

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Intrinsic charge transport on the surface of organic semiconductors

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