Intrinsic charge transport on the surface of organic semiconductors

V. Podzorov*, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, M. E. Gershenson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

986 Scopus citations

Abstract

The observation of the intrinsic transport of field-induced charges on the surface of single crystals of rubrene (C42H28 was reported. It was shown than the air-gap field-effect technique enabled realization of the intrinsic polaronic transport on the surface of rubrene crystals over a wide range of temperatures. The observation of two signatures of the intrinsic transport - the mobility increases with decreasing temperature and the mobility anisotropy, in the temperature range ∼150-300 K, was presented. It was found that at lower temperatures, where the charge transport was dominated by shallow traps, μ decreases exponentially with cooling and its anisotropy vanishes.

Original languageEnglish (US)
Article number086602
Pages (from-to)086602-1-086602-4
JournalPhysical review letters
Volume93
Issue number8
DOIs
StatePublished - Aug 20 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Intrinsic charge transport on the surface of organic semiconductors'. Together they form a unique fingerprint.

Cite this