Intrinsic electrical transport and magnetic properties oM anM MOCVD thin films and bulk material

G. Jeffrey Snyder, Ron Hiskes, Steve DiCarolis, M. R. Beasley, T. H. Geballe

Research output: Contribution to journalArticlepeer-review

650 Scopus citations


An investigation designed to display the intrinsic properties of perovskite manganites was accomplished by comparing the behavior of bulk samples with that of thin films. Epitaxial 1500 Å films of perovskite (Formula presented)(Formula presented)Mn(Formula presented) and (Formula presented)(Formula presented)Mn(Formula presented) were grown by solid source chemical vapor deposition on LaAl(Formula presented) and post annealed in oxygen at 950 °C. Crystals were prepared by laser heated pedestal growth. The magnetic and electrical transport properties of the polycrystalline pellets, crystals, and annealed films are essentially the same. Below (Formula presented) the intrinsic magnetization decreases as (Formula presented) (as can be expected for itinerant electron ferromagnets) while the intrinsic resistivity increases proportional to (Formula presented). The constant and (Formula presented) coefficients of the resistivity are largely independent of magnetic field and alkaline earth element (Ca, Sr, or Ba). Hall effect measurements indicate that holes are mobile carriers in the metallic state. We identify three distinct types of negative magnetoresistance. The largest effect, observed near the Curie temperature, is 25% for the Sr and 250% [(Formula presented)] for the Ca compound. There is also magnetoresistance associated with the net magnetization of polycrystalline samples which is not seen in films. Finally a small magnetoresistance linear in (Formula presented) is observed even at low temperatures. The high temperature (above (Formula presented)) resistivity of (Formula presented)(Formula presented)Mn(Formula presented) is consistent with small polaron hopping conductivity with a slight transition at 750 K, while (Formula presented)(Formula presented)Mn(Formula presented) does not exhibit activated conductivity until about 500 K, well above (Formula presented). The limiting low and high temperature resistivities place a limit on the maximum possible magnetoresistance of these materials and may explain why the "colossal" magnetoresistance reported in the literature correlates with the suppression of (Formula presented).

Original languageEnglish (US)
Pages (from-to)14434-14444
Number of pages11
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number21
StatePublished - 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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