Intrinsic performance variability in aligned array CNFETs

Shuaib Salamat*, Xinning Ho, John A. Rogers, Muhammad Ashraful Alam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metalnanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (VT), on current (ION}), and device resistance (Rd). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.

Original languageEnglish (US)
Article number5439863
Pages (from-to)439-444
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number3
DOIs
StatePublished - May 1 2011

Keywords

  • Aligned network transistor
  • carbon nanotube (CNT) FET (CNFET)
  • diameter distribution
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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