Intrinsic performance variability in aligned array CNFETs

Shuaib Salamat; Xinning Ho; John A. Rogers; Muhammad Ashraful Alam

doi:10.1109/TNANO.2010.2046674

Intrinsic performance variability in aligned array CNFETs

Shuaib Salamat^*, Xinning Ho, John A. Rogers, Muhammad Ashraful Alam

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metalnanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (V_T), on current (ION}), and device resistance (R_d). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.

Original language	English (US)
Article number	5439863
Pages (from-to)	439-444
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2010.2046674
State	Published - May 2011

Funding

Manuscript received July 15, 2009; revised January 11, 2010; accepted February 18, 2010. Date of publication March 29, 2010; date of current version May 11, 2011. This work was supported in part by NCN computational resources and Motorola Corporation. The work of S. Salamat and M. A. Alam was supported by the Motorola Corporation. The work of X. Ho was supported by the Agency for Science, Technology and Research (ASTAR), Singapore. Experimental work was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which were supported in part by the U.S. Department of Energy under Grant DE-FG02–07ER46453 and Grant DE-FG02–07ER46471. The review of this paper was arranged by Associate Editor C. Zhou.

Keywords

Aligned network transistor
carbon nanotube (CNT) FET (CNFET)
diameter distribution
thin-film transistor (TFT)

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2010.2046674

Cite this

@article{5bddecb4222940099078f1f08a98fce3,

title = "Intrinsic performance variability in aligned array CNFETs",

abstract = "The I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metalnanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (VT), on current (ION}), and device resistance (Rd). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.",

keywords = "Aligned network transistor, carbon nanotube (CNT) FET (CNFET), diameter distribution, thin-film transistor (TFT)",

author = "Shuaib Salamat and Xinning Ho and Rogers, {John A.} and Alam, {Muhammad Ashraful}",

note = "Funding Information: Manuscript received July 15, 2009; revised January 11, 2010; accepted February 18, 2010. Date of publication March 29, 2010; date of current version May 11, 2011. This work was supported in part by NCN computational resources and Motorola Corporation. The work of S. Salamat and M. A. Alam was supported by the Motorola Corporation. The work of X. Ho was supported by the Agency for Science, Technology and Research (ASTAR), Singapore. Experimental work was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which were supported in part by the U.S. Department of Energy under Grant DE-FG02–07ER46453 and Grant DE-FG02–07ER46471. The review of this paper was arranged by Associate Editor C. Zhou.",

year = "2011",

month = may,

doi = "10.1109/TNANO.2010.2046674",

language = "English (US)",

volume = "10",

pages = "439--444",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Intrinsic performance variability in aligned array CNFETs

AU - Salamat, Shuaib

AU - Ho, Xinning

AU - Rogers, John A.

AU - Alam, Muhammad Ashraful

N1 - Funding Information: Manuscript received July 15, 2009; revised January 11, 2010; accepted February 18, 2010. Date of publication March 29, 2010; date of current version May 11, 2011. This work was supported in part by NCN computational resources and Motorola Corporation. The work of S. Salamat and M. A. Alam was supported by the Motorola Corporation. The work of X. Ho was supported by the Agency for Science, Technology and Research (ASTAR), Singapore. Experimental work was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which were supported in part by the U.S. Department of Energy under Grant DE-FG02–07ER46453 and Grant DE-FG02–07ER46471. The review of this paper was arranged by Associate Editor C. Zhou.

PY - 2011/5

Y1 - 2011/5

N2 - The I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metalnanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (VT), on current (ION}), and device resistance (Rd). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.

AB - The I-V characteristic of carbon nanotube (CNT) transistors is dictated by the Schottky barrier (SB) at metalnanotube interface. The SB is defined by the diameter of the CNT along with the source/drain metal and is presumed a device constant for single CNT transistors. Given the wide distribution of diameter of CVD-grown nanotubes, the presumption of single SB, however, is inappropriate for transistors with aligned array of CNTs. Indeed, array transistors with similar geometries and contact material can still exhibit considerable variation in threshold voltage (VT), on current (ION}), and device resistance (Rd). We use measured diameter distribution within the framework of detailed numerical simulations to demonstrate that the diameter distribution of CNTs (in CNT FETs) plays a dominant role in defining the fluctuation of array transistors. Besides, it is argued that the large-scale integration of these devices within an IC would be feasible only if the distribution of diameter is considerably narrowed.

KW - Aligned network transistor

KW - carbon nanotube (CNT) FET (CNFET)

KW - diameter distribution

KW - thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=79955908793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955908793&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2010.2046674

DO - 10.1109/TNANO.2010.2046674

M3 - Article

AN - SCOPUS:79955908793

SN - 1536-125X

VL - 10

SP - 439

EP - 444

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 3

M1 - 5439863

ER -

Intrinsic performance variability in aligned array CNFETs

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