INIS
calculation methods
25%
concentration
75%
defects
50%
devices
25%
formation heat
25%
holes
25%
impurities
50%
interstitials
25%
iron sulfides
100%
oxygen
100%
performance
25%
point defects
25%
pyrite
100%
stoichiometry
100%
thin films
25%
vacancies
25%
Chemistry
Concentration
50%
Crystal Point Defect
25%
Device
25%
Dioxygen
100%
Energy
25%
First Principle
25%
Hole Concentration
25%
Impurity
50%
Liquid Film
25%
Pyrite
100%
Reaction Stoichiometry
100%
Engineering
Defects
100%
Device Performance
50%
Formation Energy
50%
Hole Concentration
50%
Interstitials
50%
Low Concentration
50%
Measurement
50%
Native Defect
50%
Thin Films
50%
Physics
Calculation
33%
First-Principles
33%
Impurities
66%
Interstitials
33%
Oxygen
100%
Performance
33%
Point Defect
33%
Stoichiometry
100%
Thin Films
33%
Biochemistry, Genetics and Molecular Biology
Conductance
100%
Energy
25%
Point Defect
25%
Pyrite
100%
Stoichiometry
100%
Material Science
Conductivity
100%
Devices
25%
Hole Concentration
25%
Impurity
50%
Thin Films
25%