Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Keyphrases

• 2D Heterostructures 100%
• Chemical Vapor Deposition 33%
• Contact Geometry 33%
• Contact Scheme 66%
• Device Architecture 33%
• Electrical Contact 33%
• Electronic Measurement 33%
• Electronic Properties 33%
• Electronic Transport 66%
• Generation Effect 33%
• Generation Mechanism 33%
• Heterostructure 33%
• Hexagonal Boron Nitride (h-BN) 100%
• Hot-carrier Generation 33%
• Junction Characteristics 33%
• Lateral Heterostructure 33%
• Lateral Transitions 33%
• Metal Contact 33%
• Metal Deposition 33%
• Metal-semiconductor Contact 33%
• Metal-semiconductor-metal 33%
• Order of Magnitude 33%
• Photoresponse 33%
• Rectification Ratio 33%
• Scanning Photocurrent Microscopy 33%
• Schottky Barrier 66%
• Transition Metal Dichalcogenide Heterostructures 33%
• Transition Metal Dichalcogenide Monolayer 66%
• Transition Metal Dichalcogenides 33%
• Transport Characteristics 33%
• Tunneling Contact 100%

Material Science

• Boron Nitride 100%
• Chemical Vapor Deposition 20%
• Electronic Property 20%
• Heterojunction 100%
• Hot Carrier 20%
• Metal Deposition 20%
• Monolayers 40%
• Photovoltaics 20%
• Schottky Barrier 40%
• Transition Metal Dichalcogenides 80%