Intrinsically damped multilayered (stacked) Nb/Al-AlNx/Nb superconducting tunnel junctions

E. D. Rippert*, S. N. Song, C. Thomas, S. Lomatch, S. R. Maglic, M. Ulmer, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Single and stacked Nb/Al-AlNx/Nb superconducting tunnel junctions with both hysteretic (underdamped) and non-hysteretic (overdamped) current-voltage relationships have been produced utilizing reactively sputtered aluminum nitride tunnel barriers. Standard multilayer deposition and lithographic processing techniques, compatible with existing Nb/Al-AlOx/Nb fabrication techniques, are used in fabrication. The degree of damping in the junctions is controlled through the deposition parameters. Critical current dependence on applied magnetic field indicates that the overdamped junctions have a distributed Josephson coupling and are not simple microshorts. The shorter deposition time to grow reactively sputtered AlNx barriers makes this system a promising alternative to fabricate stacked Josephson junctions.

Original languageEnglish (US)
Pages (from-to)567-572
Number of pages6
JournalApplied Superconductivity
Issue number11-12
StatePublished - 1995

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Intrinsically damped multilayered (stacked) Nb/Al-AlNx/Nb superconducting tunnel junctions'. Together they form a unique fingerprint.

Cite this