Intrinsically damped multilayered (stacked) Nb/Al-AlNx/Nb superconducting tunnel junctions

E. D. Rippert; S. N. Song; C. Thomas; S. Lomatch; S. R. Maglic; M. Ulmer; J. B. Ketterson

doi:10.1016/0964-1807(95)00087-9

Intrinsically damped multilayered (stacked) Nb/Al-AlN_x/Nb superconducting tunnel junctions

E. D. Rippert^*, S. N. Song, C. Thomas, S. Lomatch, S. R. Maglic, M. Ulmer, J. B. Ketterson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Single and stacked Nb/Al-AlN_x/Nb superconducting tunnel junctions with both hysteretic (underdamped) and non-hysteretic (overdamped) current-voltage relationships have been produced utilizing reactively sputtered aluminum nitride tunnel barriers. Standard multilayer deposition and lithographic processing techniques, compatible with existing Nb/Al-AlO_x/Nb fabrication techniques, are used in fabrication. The degree of damping in the junctions is controlled through the deposition parameters. Critical current dependence on applied magnetic field indicates that the overdamped junctions have a distributed Josephson coupling and are not simple microshorts. The shorter deposition time to grow reactively sputtered AlN_x barriers makes this system a promising alternative to fabricate stacked Josephson junctions.

Original language	English (US)
Pages (from-to)	567-572
Number of pages	6
Journal	Applied Superconductivity
Volume	3
Issue number	11-12
DOIs	https://doi.org/10.1016/0964-1807(95)00087-9
State	Published - 1995

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1016/0964-1807(95)00087-9

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title = "Intrinsically damped multilayered (stacked) Nb/Al-AlNx/Nb superconducting tunnel junctions",

abstract = "Single and stacked Nb/Al-AlNx/Nb superconducting tunnel junctions with both hysteretic (underdamped) and non-hysteretic (overdamped) current-voltage relationships have been produced utilizing reactively sputtered aluminum nitride tunnel barriers. Standard multilayer deposition and lithographic processing techniques, compatible with existing Nb/Al-AlOx/Nb fabrication techniques, are used in fabrication. The degree of damping in the junctions is controlled through the deposition parameters. Critical current dependence on applied magnetic field indicates that the overdamped junctions have a distributed Josephson coupling and are not simple microshorts. The shorter deposition time to grow reactively sputtered AlNx barriers makes this system a promising alternative to fabricate stacked Josephson junctions.",

author = "Rippert, {E. D.} and Song, {S. N.} and C. Thomas and S. Lomatch and Maglic, {S. R.} and M. Ulmer and Ketterson, {J. B.}",

year = "1995",

doi = "10.1016/0964-1807(95)00087-9",

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pages = "567--572",

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TY - JOUR

T1 - Intrinsically damped multilayered (stacked) Nb/Al-AlNx/Nb superconducting tunnel junctions

AU - Rippert, E. D.

AU - Song, S. N.

AU - Thomas, C.

AU - Lomatch, S.

AU - Maglic, S. R.

AU - Ulmer, M.

AU - Ketterson, J. B.

PY - 1995

Y1 - 1995

N2 - Single and stacked Nb/Al-AlNx/Nb superconducting tunnel junctions with both hysteretic (underdamped) and non-hysteretic (overdamped) current-voltage relationships have been produced utilizing reactively sputtered aluminum nitride tunnel barriers. Standard multilayer deposition and lithographic processing techniques, compatible with existing Nb/Al-AlOx/Nb fabrication techniques, are used in fabrication. The degree of damping in the junctions is controlled through the deposition parameters. Critical current dependence on applied magnetic field indicates that the overdamped junctions have a distributed Josephson coupling and are not simple microshorts. The shorter deposition time to grow reactively sputtered AlNx barriers makes this system a promising alternative to fabricate stacked Josephson junctions.

AB - Single and stacked Nb/Al-AlNx/Nb superconducting tunnel junctions with both hysteretic (underdamped) and non-hysteretic (overdamped) current-voltage relationships have been produced utilizing reactively sputtered aluminum nitride tunnel barriers. Standard multilayer deposition and lithographic processing techniques, compatible with existing Nb/Al-AlOx/Nb fabrication techniques, are used in fabrication. The degree of damping in the junctions is controlled through the deposition parameters. Critical current dependence on applied magnetic field indicates that the overdamped junctions have a distributed Josephson coupling and are not simple microshorts. The shorter deposition time to grow reactively sputtered AlNx barriers makes this system a promising alternative to fabricate stacked Josephson junctions.

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Intrinsically damped multilayered (stacked) Nb/Al-AlN_x/Nb superconducting tunnel junctions

Abstract

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