Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels

J. D. Perkins; T. R. Paudel; A. Zakutayev; P. F. Ndione; P. A. Parilla; D. L. Young; S. Lany; D. S. Ginley; A. Zunger; N. H. Perry; Y. Tang; M. Grayson; T. O. Mason; J. S. Bettinger; Y. Shi; M. F. Toney

doi:10.1103/PhysRevB.84.205207

Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels

J. D. Perkins^*, T. R. Paudel, A. Zakutayev, P. F. Ndione, P. A. Parilla, D. L. Young, S. Lany, D. S. Ginley, A. Zunger, N. H. Perry, Y. Tang, M. Grayson, T. O. Mason, J. S. Bettinger, Y. Shi, M. F. Toney

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding p-type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A ₂BO₄ spinel Co₂ZnO₄, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co₂ZnO ₄ due to extrinsic (Mg) doping and, ultimately, a factor of 104 increase for the inverse spinel Co₂NiO₄, the x = 1 end point of Ni-doped Co₂Zn_1-xNi_xO₄.

Original language	English (US)
Article number	205207
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.84.205207
State	Published - Nov 14 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.84.205207

Cite this

Perkins, J. D., Paudel, T. R., Zakutayev, A., Ndione, P. F., Parilla, P. A., Young, D. L., Lany, S., Ginley, D. S., Zunger, A., Perry, N. H., Tang, Y., Grayson, M., Mason, T. O., Bettinger, J. S., Shi, Y., & Toney, M. F. (2011). Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels. Physical Review B - Condensed Matter and Materials Physics, 84(20), Article 205207. https://doi.org/10.1103/PhysRevB.84.205207

@article{7a25364ae4e54be2959720faf51ed3ba,

title = "Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels",

abstract = "Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding p-type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A 2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO 4 due to extrinsic (Mg) doping and, ultimately, a factor of 104 increase for the inverse spinel Co2NiO4, the x = 1 end point of Ni-doped Co2Zn1-xNixO4.",

author = "Perkins, {J. D.} and Paudel, {T. R.} and A. Zakutayev and Ndione, {P. F.} and Parilla, {P. A.} and Young, {D. L.} and S. Lany and Ginley, {D. S.} and A. Zunger and Perry, {N. H.} and Y. Tang and M. Grayson and Mason, {T. O.} and Bettinger, {J. S.} and Y. Shi and Toney, {M. F.}",

year = "2011",

month = nov,

day = "14",

doi = "10.1103/PhysRevB.84.205207",

language = "English (US)",

volume = "84",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "20",

}

Perkins, JD, Paudel, TR, Zakutayev, A, Ndione, PF, Parilla, PA, Young, DL, Lany, S, Ginley, DS, Zunger, A, Perry, NH, Tang, Y, Grayson, M , Mason, TO, Bettinger, JS, Shi, Y & Toney, MF 2011, 'Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels', Physical Review B - Condensed Matter and Materials Physics, vol. 84, no. 20, 205207. https://doi.org/10.1103/PhysRevB.84.205207

TY - JOUR

T1 - Inverse design approach to hole doping in ternary oxides

T2 - Enhancing p-type conductivity in cobalt oxide spinels

AU - Perkins, J. D.

AU - Paudel, T. R.

AU - Zakutayev, A.

AU - Ndione, P. F.

AU - Parilla, P. A.

AU - Young, D. L.

AU - Lany, S.

AU - Ginley, D. S.

AU - Zunger, A.

AU - Perry, N. H.

AU - Tang, Y.

AU - Grayson, M.

AU - Mason, T. O.

AU - Bettinger, J. S.

AU - Shi, Y.

AU - Toney, M. F.

PY - 2011/11/14

Y1 - 2011/11/14

N2 - Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding p-type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A 2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO 4 due to extrinsic (Mg) doping and, ultimately, a factor of 104 increase for the inverse spinel Co2NiO4, the x = 1 end point of Ni-doped Co2Zn1-xNixO4.

AB - Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding p-type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A 2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO 4 due to extrinsic (Mg) doping and, ultimately, a factor of 104 increase for the inverse spinel Co2NiO4, the x = 1 end point of Ni-doped Co2Zn1-xNixO4.

UR - http://www.scopus.com/inward/record.url?scp=82655166243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82655166243&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.84.205207

DO - 10.1103/PhysRevB.84.205207

M3 - Article

AN - SCOPUS:82655166243

SN - 1098-0121

VL - 84

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 205207

ER -

Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this