Abstract
We introduce an inverse design framework based on artificial neural networks, genetic algorithms, and tight-binding calculations, capable to optimize the very large configuration space of nanoelectronic devices. Our non-linear optimization procedure operates on trial Hamiltonians through superoperators controlling growth policies of regions of distinct doping. We demonstrate that our algorithm optimizes the doping of graphene-based three-terminal devices for valleytronics applications, monotonously converging to synthesizable devices with high merit functions in a few thousand evaluations (out of â23800 possible configurations). The best-performing device allowed for a terminal-specific separation of valley currents with â96% (â94%) K(K) valley purity. Importantly, the devices found through our non-linear optimization procedure have both a higher merit function and higher robustness to defects than the ones obtained through geometry optimization.
Original language | English (US) |
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Pages (from-to) | 26117-26123 |
Number of pages | 7 |
Journal | Journal of Physical Chemistry C |
Volume | 124 |
Issue number | 48 |
DOIs | |
State | Published - Dec 3 2020 |
Funding
K.R. and I.T. acknowledge funding from the Natural Sciences and Engineering Research Council of Canada. Work at the National Research Council was carried out under the auspices of the AI4Design Program. K.R. and I.T. acknowledge Compute Canada and the National Energy Research Scientific Computing Center for computational resources. This material is based upon work supported by Laboratory Directed Research and Development (LDRD) funding from the Argonne National Laboratory, provided by the Director, Office of Science, of the U.S. Department of Energy under contract no. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under contract no. DE-AC02-06CH11357.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Energy
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films