@inproceedings{10e052cb535248778f4e2b2bfb6d88ea,
title = "Investigation of 0.8-um InGaAsP-GaAs laser diodes with multiple quantum wells",
abstract = "In this paper, we studied the effects of the active region structure (one, two and three quantum wells with same total thickness) for high-power InGaAsP-GaAs separate confinement heterostructure lasers emitting at 0.8 μm wavelength. Experimental results for the lasers grown by low pressure metalorganic chemical vapor deposition show excellent agreement with the theoretical model. Total output power of 47 W from an uncoated 1 cm-wide laser bar was achieved in quasi-continuous wave operation.",
author = "Jaqueline Diaz and Yi, {H. J.} and S. Kim and M. Erdtmann and Wang, {Liusheng J.} and Ivan Eliashevich and Erwan Bigan and Manijeh Razeghi",
year = "1995",
month = jan,
day = "1",
language = "English (US)",
isbn = "0819417440",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "350--362",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Optoelectronic Integrated Circuit Materials, Physics, and Devices ; Conference date: 06-02-1995 Through 09-02-1995",
}