Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers

Lijun Wang*, Shengli Wu, Yun Liu, Yongqiang Ning, J. Diaz, I. Eliashevich, H. J. Yi, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm2, output light power 2 W in continuous wave (CW), slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T0 is 330° K.

Original languageEnglish (US)
Pages (from-to)102-104
Number of pages3
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3547
StatePublished - Dec 1 1998
EventProceedings of the 1998 Conference on Semiconductor Lasers III - Beijing, China
Duration: Sep 16 1998Sep 18 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Wang, L., Wu, S., Liu, Y., Ning, Y., Diaz, J., Eliashevich, I., Yi, H. J., & Razeghi, M. (1998). Investigation of 980 nm GaInAs/GaAs/GaInP QW high power lasers. Proceedings of SPIE - The International Society for Optical Engineering, 3547, 102-104.