The properties of acceptors in undoped and deliberately doped vapor epitaxial zinc selenide have been assessed using optical deep level transient spectroscopy (ODLTS). Thermal activation energies, capture cross-section prefactors and trap concentrations have been measured for the impurities Na, N and P. ODLTS studies confirm that Na and N introduce shallow acceptor levels, wheras P introduces only deep levels. Steady state photocapacitance measurements on undoped n-type material indicated the presence of deep states near mid band gap in addition to shallow acceptor states.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Publisher||Metallurgical Soc of AIME|
|Number of pages||8|
|State||Published - Jan 1 1985|
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