Abstract
The properties of acceptors in undoped and deliberately doped vapor epitaxial zinc selenide have been assessed using optical deep level transient spectroscopy (ODLTS). Thermal activation energies, capture cross-section prefactors and trap concentrations have been measured for the impurities Na, N and P. ODLTS studies confirm that Na and N introduce shallow acceptor levels, wheras P introduces only deep levels. Steady state photocapacitance measurements on undoped n-type material indicated the presence of deep states near mid band gap in addition to shallow acceptor states.
Original language | English (US) |
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Title of host publication | Unknown Host Publication Title |
Publisher | Metallurgical Soc of AIME |
Pages | 1229-1236 |
Number of pages | 8 |
ISBN (Print) | 0895204851 |
State | Published - 1985 |
ASJC Scopus subject areas
- General Engineering