INVESTIGATION OF ACCEPTORS IN AS-GROWN ZnSe BY ODLTS AND PHOTOCAPACITANCE SPECTROSCOPY.

W. B. Leigh*, K. A. Christianson, Bruce W Wessels

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The properties of acceptors in undoped and deliberately doped vapor epitaxial zinc selenide have been assessed using optical deep level transient spectroscopy (ODLTS). Thermal activation energies, capture cross-section prefactors and trap concentrations have been measured for the impurities Na, N and P. ODLTS studies confirm that Na and N introduce shallow acceptor levels, wheras P introduces only deep levels. Steady state photocapacitance measurements on undoped n-type material indicated the presence of deep states near mid band gap in addition to shallow acceptor states.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherMetallurgical Soc of AIME
Pages1229-1236
Number of pages8
ISBN (Print)0895204851
StatePublished - Jan 1 1985

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'INVESTIGATION OF ACCEPTORS IN AS-GROWN ZnSe BY ODLTS AND PHOTOCAPACITANCE SPECTROSCOPY.'. Together they form a unique fingerprint.

Cite this