Investigation of Current Gain in Superconducting-Ferromagnetic Transistors with High-jc Acceptor

Ivan P. Nevirkovets; Serhii Shafraniuk; Oleksandr Chernyashevskyy; Daniel T. Yohannes; Oleg A. Mukhanov; John B. Ketterson

doi:10.1109/TASC.2016.2637864

Investigation of Current Gain in Superconducting-Ferromagnetic Transistors with High-jc Acceptor

Ivan P. Nevirkovets, Serhii Shafraniuk, Oleksandr Chernyashevskyy, Daniel T. Yohannes, Oleg A. Mukhanov, John B. Ketterson

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the results of a study of the current gain in high Josephson critical current density (jc ) superconductingferromagnetic transistors with the SISFIFS structure [where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (permalloy, Py), respectively]. The Nb/AlOx/Nb trilayer, which serves as the acceptor (SIS) junction, is estimated to have Josephson critical current density jc of 19 kA/cm2. The Al/Py/Al/AlOx/Py/Al/Nb multilayer is deposited in a separate vacuum run after in situ ionmilling of about 8 nmof the top Nb layer. The devices are patterned using optical lithography and tested at 4.2 K. We have observed a small-signal current gain in the range of 5-9.We demonstrate that proper device engineering allows one to efficiently control the maximum Josephson current in the SISF acceptor junction using the quasiparticle injection.

Original language	English (US)
Article number	7779084
Journal	IEEE Transactions on Applied Superconductivity
Volume	27
Issue number	4
DOIs	https://doi.org/10.1109/TASC.2016.2637864
State	Published - Jun 2017

Keywords

Josephson effect
Superconducting-ferromagnetic hybrid structures
proximity effect
quasiparticle injection
superconducting transistor
superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TASC.2016.2637864

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title = "Investigation of Current Gain in Superconducting-Ferromagnetic Transistors with High-jc Acceptor",

abstract = "We report the results of a study of the current gain in high Josephson critical current density (jc ) superconductingferromagnetic transistors with the SISFIFS structure [where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (permalloy, Py), respectively]. The Nb/AlOx/Nb trilayer, which serves as the acceptor (SIS) junction, is estimated to have Josephson critical current density jc of 19 kA/cm2. The Al/Py/Al/AlOx/Py/Al/Nb multilayer is deposited in a separate vacuum run after in situ ionmilling of about 8 nmof the top Nb layer. The devices are patterned using optical lithography and tested at 4.2 K. We have observed a small-signal current gain in the range of 5-9.We demonstrate that proper device engineering allows one to efficiently control the maximum Josephson current in the SISF acceptor junction using the quasiparticle injection.",

keywords = "Josephson effect, Superconducting-ferromagnetic hybrid structures, proximity effect, quasiparticle injection, superconducting transistor, superconductivity",

author = "Nevirkovets, {Ivan P.} and Serhii Shafraniuk and Oleksandr Chernyashevskyy and Yohannes, {Daniel T.} and Mukhanov, {Oleg A.} and Ketterson, {John B.}",

note = "Publisher Copyright: {\textcopyright} 2002-2011 IEEE.",

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language = "English (US)",

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T1 - Investigation of Current Gain in Superconducting-Ferromagnetic Transistors with High-jc Acceptor

AU - Nevirkovets, Ivan P.

AU - Shafraniuk, Serhii

AU - Chernyashevskyy, Oleksandr

AU - Yohannes, Daniel T.

AU - Mukhanov, Oleg A.

AU - Ketterson, John B.

PY - 2017/6

Y1 - 2017/6

N2 - We report the results of a study of the current gain in high Josephson critical current density (jc ) superconductingferromagnetic transistors with the SISFIFS structure [where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (permalloy, Py), respectively]. The Nb/AlOx/Nb trilayer, which serves as the acceptor (SIS) junction, is estimated to have Josephson critical current density jc of 19 kA/cm2. The Al/Py/Al/AlOx/Py/Al/Nb multilayer is deposited in a separate vacuum run after in situ ionmilling of about 8 nmof the top Nb layer. The devices are patterned using optical lithography and tested at 4.2 K. We have observed a small-signal current gain in the range of 5-9.We demonstrate that proper device engineering allows one to efficiently control the maximum Josephson current in the SISF acceptor junction using the quasiparticle injection.

AB - We report the results of a study of the current gain in high Josephson critical current density (jc ) superconductingferromagnetic transistors with the SISFIFS structure [where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (permalloy, Py), respectively]. The Nb/AlOx/Nb trilayer, which serves as the acceptor (SIS) junction, is estimated to have Josephson critical current density jc of 19 kA/cm2. The Al/Py/Al/AlOx/Py/Al/Nb multilayer is deposited in a separate vacuum run after in situ ionmilling of about 8 nmof the top Nb layer. The devices are patterned using optical lithography and tested at 4.2 K. We have observed a small-signal current gain in the range of 5-9.We demonstrate that proper device engineering allows one to efficiently control the maximum Josephson current in the SISF acceptor junction using the quasiparticle injection.

KW - Josephson effect

KW - Superconducting-ferromagnetic hybrid structures

KW - proximity effect

KW - quasiparticle injection

KW - superconducting transistor

KW - superconductivity

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Investigation of Current Gain in Superconducting-Ferromagnetic Transistors with High-jc Acceptor

Abstract

Keywords

ASJC Scopus subject areas

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