Investigation of de Josephson current distribution in double-barrier three-terminal devices with a thin middle superconducting layer

I. P. Nevirkovets*, T. Doderer, A. Laub, M. G. Blamire, J. E. Evetts

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Nb/Al-AlOx-Nb/Al-AlOx-Nb double-barrier three-terminal Josephson devices with a thin middle Nb/Al bilayer, which have potential for use as switching and amplifying elements in superconducting electronics, have been investigated in the stationary state by means of low-temperature scanning electron microscopy. For the devices with lateral sizes comparable with the effective Josephson penetration depth, we observed nearly homogeneous current distribution over the region common to the top and bottom junctions when the devices were biased across both the barriers in the absence of an external magnetic field. When the two junctions are biased separately, the current it concentrated at the junction edges in accordance with the behavior characteristic of distributed junctions. In an applied magnetic field, the vortex structure is confined to the area shared by both junctions when the device is biased as a whole. The experiment gives an indication that in the stationary state the spatial phase difference distribution of the two junctions coincides in the shared region at least in some interval of the external magnetic field.

Original languageEnglish (US)
Pages (from-to)2321-2326
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number4
DOIs
StatePublished - Aug 15 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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