Investigation of deep-level luminescence in In0.07Ga 0.93N:Mg

B. Han, M. P. Ulmer, B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

Deep-level defects formed in InGaN:Mg have been investigated by photoluminescence (PL) spectroscopy. Undoped In0.07Ga 0.93N exhibits strong bandedge emission at 3.05 eV. Upon Mg doping the bandedge emission quenches and a 2.45 eV green band with a full-width at half-maximum of 800 meV dominates the room temperature PL spectrum. This band is attributed to donor-acceptor pair (DAP) recombination involving Mg acceptors and nitrogen vacancy donors. A decrease in the DAP emission bandwidth and an S-shaped emission shift with increasing temperature were observed and attributed to compositional fluctuations. In order to decrease the fluctuations, InGaN:Mg epilayers with a GaN capping layer were annealed at high temperature. As a result of the fluctuation reduction a fine structure related to phonon replicas was resolved. The measured phonon energy and the Huang-Rhys factor were 105meV and 6.3, respectively, indicating strong electron-phonon coupling is responsible for the large width of the green band.

Original languageEnglish (US)
Pages (from-to)470-474
Number of pages5
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
StatePublished - Dec 31 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: Jul 28 2003Aug 1 2003

Keywords

  • InGaN
  • Photoluminescence
  • Self-compensation
  • Wide-gap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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