Investigation of double-barrier Nb-Al-AlOx-Al-AlOx-(Al-)Nb junctions under high-frequency irradiation

Ivan P. Nevirkovets*, John B. Ketterson, Michael Siegel

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations


We have studied experimentally the current-voltage characteristics of double-barrier Nb-Al-AlOx-Al-AlOx-(Al-)Nb junctions exposed to microwave radiation at 4.2 K. Both integer and fractional Shapiro steps were observed. A complicated behavior of the step heights was observed as a function of both the microwave power and an applied magnetic field. Reasonable agreement with the RSJ model was obtained only for the steps 0 to 2 observed in current-voltage characteristics of the junctions with a "clean" middle Al layer. A deviation from RSJ-like behavior was found for higher-order integer steps and fractional steps. Devices with a "dirty" middle Al layer displayed more significant deviation from RSJ-like behavior. Step heights vs. magnetic field dependences in some cases were found to be qualitatively different from the field dependence of the dc Josephson current.

Original languageEnglish (US)
Pages (from-to)1138-1141
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Issue number1 I
StatePublished - Mar 2001
Event2000 Applied Superconductivity Conference - Virginia Beach, VA, United States
Duration: Sep 17 2000Sep 22 2000


  • Josephson effect
  • Microwave radiation
  • SINIS junctions
  • Shapiro steps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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