Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga2O3 Due to Interfacing with β-Ga2O3 Template Layers

Junhee Lee; Lakshay Gautam; Ferechteh H. Teherani; Eric V. Sandana; Philippe Bove; David J. Rogers; Manijeh Razeghi

doi:10.1002/pssa.202200559

Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga₂O₃ Due to Interfacing with β-Ga₂O₃ Template Layers

Junhee Lee, Lakshay Gautam, Ferechteh H. Teherani, Eric V. Sandana, Philippe Bove, David J. Rogers, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Heteroepitaxial κ-Ga₂O₃ films grown by metal–organic chemical vapor deposition (MOCVD) are found to have superior materials and electrical properties thanks to the interfacing with a β-Ga₂O₃ template layer. κ-Ga₂O₃ grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a β-Ga₂O₃ template on a c-sapphire substrate, higher quality κ-Ga₂O₃ thin films are obtained, as evidenced by a smoother surface morphology, narrower X-ray diffraction (XRD) peaks, and superior electrical performance. The implications of this phenomenon, caused by β-Ga₂O₃ buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga₂O₃.

Original language	English (US)
Article number	2200559
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	220
Issue number	8
DOIs	https://doi.org/10.1002/pssa.202200559
State	Published - Apr 2023

Funding

This work is supported by Air Force under the agreement of FA9550‐19‐1‐0410. The authors would like to acknowledge the support and interest of Dr. Ali Sayir of USAF‐AFMC AFMCAFOSR/RTB).

Keywords

GaO
MOCVD
epitaxy
improvement in material quality
low defect density

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

Access to Document

10.1002/pssa.202200559

Cite this

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title = "Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga2O3 Due to Interfacing with β-Ga2O3 Template Layers",

abstract = "Heteroepitaxial κ-Ga2O3 films grown by metal–organic chemical vapor deposition (MOCVD) are found to have superior materials and electrical properties thanks to the interfacing with a β-Ga2O3 template layer. κ-Ga2O3 grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a β-Ga2O3 template on a c-sapphire substrate, higher quality κ-Ga2O3 thin films are obtained, as evidenced by a smoother surface morphology, narrower X-ray diffraction (XRD) peaks, and superior electrical performance. The implications of this phenomenon, caused by β-Ga2O3 buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga2O3.",

keywords = "GaO, MOCVD, epitaxy, improvement in material quality, low defect density",

author = "Junhee Lee and Lakshay Gautam and Teherani, {Ferechteh H.} and Sandana, {Eric V.} and Philippe Bove and Rogers, {David J.} and Manijeh Razeghi",

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AU - Lee, Junhee

AU - Gautam, Lakshay

AU - Teherani, Ferechteh H.

AU - Sandana, Eric V.

AU - Bove, Philippe

AU - Rogers, David J.

AU - Razeghi, Manijeh

PY - 2023/4

Y1 - 2023/4

N2 - Heteroepitaxial κ-Ga2O3 films grown by metal–organic chemical vapor deposition (MOCVD) are found to have superior materials and electrical properties thanks to the interfacing with a β-Ga2O3 template layer. κ-Ga2O3 grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a β-Ga2O3 template on a c-sapphire substrate, higher quality κ-Ga2O3 thin films are obtained, as evidenced by a smoother surface morphology, narrower X-ray diffraction (XRD) peaks, and superior electrical performance. The implications of this phenomenon, caused by β-Ga2O3 buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga2O3.

AB - Heteroepitaxial κ-Ga2O3 films grown by metal–organic chemical vapor deposition (MOCVD) are found to have superior materials and electrical properties thanks to the interfacing with a β-Ga2O3 template layer. κ-Ga2O3 grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a β-Ga2O3 template on a c-sapphire substrate, higher quality κ-Ga2O3 thin films are obtained, as evidenced by a smoother surface morphology, narrower X-ray diffraction (XRD) peaks, and superior electrical performance. The implications of this phenomenon, caused by β-Ga2O3 buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga2O3.

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KW - improvement in material quality

KW - low defect density

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