Abstract
The electronic and optical properties of Er-related center in doped vapor phase epitaxial GaP were investigated. Photocapacitance measurements revealed three Er-related transitions at 0.80, 1.27, and 1.50 eV. The transitions at 0.80 and 1.27 eV involve the direct excitation of Er3+ 4f shell electrons. The transition at 1.50 eV involves the excitation of an electron from the valence band to an Er-related trapping center. Photoluminescence excitation spectra of Er-doped GaP indicated three types of mechanisms for the excitation of characteristic 4f shell luminescence. Peaks at 1.27 and 1.55 eV were attributed to direct excitation of intra-4f-shell electrons, while the threshold of 1.50 eV is attributed to a valence band to Er3+ center transition.
Original language | English (US) |
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Pages (from-to) | 663-668 |
Number of pages | 6 |
Journal | Materials Science Forum |
Volume | 196-201 |
Issue number | pt 2 |
DOIs | |
State | Published - 1995 |
Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: Jul 23 1995 → Jul 28 1995 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering