Investigation of Er-related centers in doped GaP

X. Z. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

The electronic and optical properties of Er-related center in doped vapor phase epitaxial GaP were investigated. Photocapacitance measurements revealed three Er-related transitions at 0.80, 1.27, and 1.50 eV. The transitions at 0.80 and 1.27 eV involve the direct excitation of Er3+ 4f shell electrons. The transition at 1.50 eV involves the excitation of an electron from the valence band to an Er-related trapping center. Photoluminescence excitation spectra of Er-doped GaP indicated three types of mechanisms for the excitation of characteristic 4f shell luminescence. Peaks at 1.27 and 1.55 eV were attributed to direct excitation of intra-4f-shell electrons, while the threshold of 1.50 eV is attributed to a valence band to Er3+ center transition.

Original languageEnglish (US)
Pages (from-to)663-668
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 2
DOIs
StatePublished - 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: Jul 23 1995Jul 28 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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