Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement

G. Chen; A. M. Hoang; S. Bogdanov; A. Haddadi; P. R. Bijjam; B. M. Nguyen; M. Razeghi

doi:10.1063/1.4813479

Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement

G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, P. R. Bijjam, B. M. Nguyen, M. Razeghi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6 meV and a total concentration of low 10¹⁵ cm^-3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.

Original language	English (US)
Article number	033512
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4813479
State	Published - Jul 15 2013

Funding

The authors acknowledge the support, interest, and encouragement of Dr. Meimei Tidrow, Dr. Fenner Milton, and Dr. Joseph Pellegrino from the U.S. Army Night Vision Laboratory, Dr. William Clark from U.S. Army Research Office, and Dr. Nibir Dhar from Defense Advanced Research Projects Agency. This material is based upon work supported by, or in part by, the U.S. Army Research Laboratory and the U.S. Army Research Office under cooperative Agreement No. W911NF-12-2-0009.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4813479

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title = "Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement",

abstract = "Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6 meV and a total concentration of low 1015 cm-3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.",

author = "G. Chen and Hoang, {A. M.} and S. Bogdanov and A. Haddadi and Bijjam, {P. R.} and Nguyen, {B. M.} and M. Razeghi",

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doi = "10.1063/1.4813479",

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AU - Chen, G.

AU - Hoang, A. M.

AU - Bogdanov, S.

AU - Haddadi, A.

AU - Bijjam, P. R.

AU - Nguyen, B. M.

AU - Razeghi, M.

N1 - Funding Information: The authors acknowledge the support, interest, and encouragement of Dr. Meimei Tidrow, Dr. Fenner Milton, and Dr. Joseph Pellegrino from the U.S. Army Night Vision Laboratory, Dr. William Clark from U.S. Army Research Office, and Dr. Nibir Dhar from Defense Advanced Research Projects Agency. This material is based upon work supported by, or in part by, the U.S. Army Research Laboratory and the U.S. Army Research Office under cooperative Agreement No. W911NF-12-2-0009.

PY - 2013/7/15

Y1 - 2013/7/15

N2 - Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6 meV and a total concentration of low 1015 cm-3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.

AB - Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6 meV and a total concentration of low 1015 cm-3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.

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Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement

Abstract

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ASJC Scopus subject areas

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