Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition

D. J. Rogers, F. Hosseini Teherani, P. Bove, A. Lusson, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MgZnO thin films were grown on c-sapphire and ZnO-coated c-sapphire substrates by pulsed laser deposition from a ZnMgO target with 4 at% Mg. The MgZnO grown on the ZnO underlayer showed significantly better crystal quality than that grown directly on sapphire. AFM studies revealed a significant deterioration in surface morphology for the MgZnO layers compared with the ZnO underlayer. Optical transmission studies indicated a MgZnO bandgap of 3.61eV (compared with 3.34eV for the ZnO), which corresponds to a Mg content of about 16.1 at%. The MgZnO/ZnO heterojunction showed an anomalously low resistivity, which was more than two orders of magnitude less than the MgZnO layer and an order of magnitude lower than that for the ZnO layer. It was suggested that this may be attributable to the presence of a 2D electron gas at the ZnMgO/ZnO heterointerface.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices IV
DOIs
StatePublished - May 30 2013
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: Feb 3 2013Feb 6 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8626
ISSN (Print)0277-786X

Other

OtherOxide-Based Materials and Devices IV
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/3/132/6/13

Keywords

  • Bandgap engineering
  • Heterointerface
  • MgZnO
  • PLD
  • Transmittance
  • UV
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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