Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications

J. J. Lee*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

We report on the growth and investigation of InTlSb and InSbBi alloys for uncooled infrared photodetector applications. The epitaxial layers of the materials have been grown on (100) InSb or GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The incorporation of TI and Bi has been verified by x-ray diffraction spectra, Auger electron spectroscopy, and energy dispersive x-ray analysis. The maximum incorporation of TI and Bi estimated from the optical band gap change was 5.6 and 5.8%, respectively. The lattice contraction with the incorporation of TI and Bi was verified by high resolution x-ray diffraction spectra. Tetragonal structure for the InSbBi and hybridized nature for the InTlSb alloys have been suggested to explain this abnormal behavior. The fabrication and characterization of photoconductive detectors based on these materials are also reported. Photoresponse of InTlSb photodetectors was observed up to 11 μm at 300 K. The maximum responsivity of an In0.96Tl0.04Sb photodetector was about 6.6 V/W at 77K, corresponding to a Johnson noise limited detectivity of 7.6 × 108cmHz1/2/W. The carrier lifetime in InTlSb photodetectors was 10-50 ns at 77 K. The responsivity of the InSb0.96Bi0.04 photodetector at 7 μm was about 3.2 V/W at 77K with corresponding Johnson noise limited detectivity of 4.7 × 108 cmHz1/2/W. The carrier lifetime of InSbBi detector was estimated to be about 86 ns from the voltage dependent responsivity measurements. The InSb0.95Bi0.05 photodetectors exhibited peak responsivity of 7.0 × 10-3 V/W with photoresponse up to 12 μm and estimated carrier life time of 17 ns at room temperature.

Original languageEnglish (US)
Pages (from-to)256-261
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3287
DOIs
StatePublished - Dec 1 1998
EventPhotodetectors: Materials and Devices III - San Jose, CA, United States
Duration: Jan 28 1998Jan 30 1998

Keywords

  • InSbBi
  • InTlSb
  • Infrared
  • MOCVD
  • Photodetectors
  • Uncooled

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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