Investigation of Te inclusion induced glides and the corresponding dislocations in CdZnTe crystal

Yadong Xu*, Yihui He, Tao Wang, Rongrong Guo, Wanqi Jie, Paul J. Sellin, Mattew Veale

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Te inclusion induced dislocations were identified using FE-SEM imaging on CdZnTe (111) B face, after etching by Everson solution. Hexagram etching pits rosette was observed, which suggests a noticeable enrichment of dislocations surrounding a Te inclusion. The spatial distribution of the etch pits possibly correlates with the screw and edge dislocations, respectively. The corresponding dislocations attributed to the tetrahedral and tangential glide, respectively, occurred by local deformation of CdZnTe crystal. This deformation was contributed by the contraction of Te inclusions during cooling down to room temperature, since the thermal expansion coefficient of Te is significantly higher than that of CdZnTe crystal. Both tetrahedral and tangential glides were dominated by the plastic deformation mechanism for zinc-blende structure material. In addition, the volume of the dislocation enriched region was found to be significantly bigger than the volume of Te inclusion itself, and was proportional to the volume of the originating Te inclusion.

Original languageEnglish (US)
Pages (from-to)417-420
Number of pages4
Issue number2
StatePublished - Jan 21 2012

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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