Investigation of the defect structure of GaN heavily doped with oxygen

R. Y. Korotkov; F. Niu; J. M. Gregie; B. W. Wessels

doi:10.1016/S0921-4526(01)00658-5

Investigation of the defect structure of GaN heavily doped with oxygen

R. Y. Korotkov, F. Niu, J. M. Gregie, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The defect structure of oxygen-doped GaN grown by MOVPE was investigated. At high oxygen pressures, a super-linear increase of electron concentration as a function of partial pressure was observed. Electron concentrations as high as 7 × 10¹⁹ cm^-3 were measured. Formation of micropits was observed by scanning electron microscopy in heavily doped samples. Cross-sectional transmission electron microscopy studies indicated the presence of epitaxial precipitates located on the cavity surface. The precipitates are believed to be related to gallium oxide. Using spatially resolved photoluminescence (PL), a broad PL band at 3.56 eV was observed near the micropit regions. The band was attributed to free-electron recombination from the highly degenerate areas associated with oxygen.

Original language	English (US)
Pages (from-to)	26-29
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00658-5
State	Published - Dec 2001

Keywords

Microcavities
O-doped GaN
Photoluminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00658-5

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title = "Investigation of the defect structure of GaN heavily doped with oxygen",

abstract = "The defect structure of oxygen-doped GaN grown by MOVPE was investigated. At high oxygen pressures, a super-linear increase of electron concentration as a function of partial pressure was observed. Electron concentrations as high as 7 × 1019 cm-3 were measured. Formation of micropits was observed by scanning electron microscopy in heavily doped samples. Cross-sectional transmission electron microscopy studies indicated the presence of epitaxial precipitates located on the cavity surface. The precipitates are believed to be related to gallium oxide. Using spatially resolved photoluminescence (PL), a broad PL band at 3.56 eV was observed near the micropit regions. The band was attributed to free-electron recombination from the highly degenerate areas associated with oxygen.",

keywords = "Microcavities, O-doped GaN, Photoluminescence",

author = "Korotkov, {R. Y.} and F. Niu and Gregie, {J. M.} and Wessels, {B. W.}",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00658-5",

language = "English (US)",

volume = "308-310",

pages = "26--29",

journal = "Physica B: Condensed Matter",

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T1 - Investigation of the defect structure of GaN heavily doped with oxygen

AU - Korotkov, R. Y.

AU - Niu, F.

AU - Gregie, J. M.

AU - Wessels, B. W.

PY - 2001/12

Y1 - 2001/12

N2 - The defect structure of oxygen-doped GaN grown by MOVPE was investigated. At high oxygen pressures, a super-linear increase of electron concentration as a function of partial pressure was observed. Electron concentrations as high as 7 × 1019 cm-3 were measured. Formation of micropits was observed by scanning electron microscopy in heavily doped samples. Cross-sectional transmission electron microscopy studies indicated the presence of epitaxial precipitates located on the cavity surface. The precipitates are believed to be related to gallium oxide. Using spatially resolved photoluminescence (PL), a broad PL band at 3.56 eV was observed near the micropit regions. The band was attributed to free-electron recombination from the highly degenerate areas associated with oxygen.

AB - The defect structure of oxygen-doped GaN grown by MOVPE was investigated. At high oxygen pressures, a super-linear increase of electron concentration as a function of partial pressure was observed. Electron concentrations as high as 7 × 1019 cm-3 were measured. Formation of micropits was observed by scanning electron microscopy in heavily doped samples. Cross-sectional transmission electron microscopy studies indicated the presence of epitaxial precipitates located on the cavity surface. The precipitates are believed to be related to gallium oxide. Using spatially resolved photoluminescence (PL), a broad PL band at 3.56 eV was observed near the micropit regions. The band was attributed to free-electron recombination from the highly degenerate areas associated with oxygen.

KW - Microcavities

KW - O-doped GaN

KW - Photoluminescence

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DO - 10.1016/S0921-4526(01)00658-5

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SN - 0921-4526

VL - 308-310

SP - 26

EP - 29

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Investigation of the defect structure of GaN heavily doped with oxygen

Abstract

Keywords

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