Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

F. Shahedipour; B. W. Wessels

doi:10.1063/1.126562

Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

F. Shahedipour, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

The stability of defects present in GaN:Mg has been investigated using photoluminescence (PL) spectroscopy. The two dominant defect-related PL emission bands in p-type GaN were investigated, the blue band at 2.8 eV and the ultraviolet (UV) emission band at 3.27 eV. The intensity of the 3.27 eV PL band increases with increasing resistivity, whereas the 2.8 eV PL band intensity increases with a decrease in resistivity. The luminescence data is explained by a model whereby the concentration of luminescent centers depends on the Fermi level position. The shallow donor responsible for the UV band is attributed to hydrogen, whereas the deep donor defect responsible for the 2.8 eV band is attributed to a nitrogen vacancy complex.

Original language	English (US)
Pages (from-to)	3011-3013
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	21
DOIs	https://doi.org/10.1063/1.126562
State	Published - May 22 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg",

abstract = "The stability of defects present in GaN:Mg has been investigated using photoluminescence (PL) spectroscopy. The two dominant defect-related PL emission bands in p-type GaN were investigated, the blue band at 2.8 eV and the ultraviolet (UV) emission band at 3.27 eV. The intensity of the 3.27 eV PL band increases with increasing resistivity, whereas the 2.8 eV PL band intensity increases with a decrease in resistivity. The luminescence data is explained by a model whereby the concentration of luminescent centers depends on the Fermi level position. The shallow donor responsible for the UV band is attributed to hydrogen, whereas the deep donor defect responsible for the 2.8 eV band is attributed to a nitrogen vacancy complex.",

author = "F. Shahedipour and Wessels, {B. W.}",

year = "2000",

month = may,

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doi = "10.1063/1.126562",

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journal = "Applied Physics Letters",

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T1 - Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

AU - Shahedipour, F.

AU - Wessels, B. W.

PY - 2000/5/22

Y1 - 2000/5/22

N2 - The stability of defects present in GaN:Mg has been investigated using photoluminescence (PL) spectroscopy. The two dominant defect-related PL emission bands in p-type GaN were investigated, the blue band at 2.8 eV and the ultraviolet (UV) emission band at 3.27 eV. The intensity of the 3.27 eV PL band increases with increasing resistivity, whereas the 2.8 eV PL band intensity increases with a decrease in resistivity. The luminescence data is explained by a model whereby the concentration of luminescent centers depends on the Fermi level position. The shallow donor responsible for the UV band is attributed to hydrogen, whereas the deep donor defect responsible for the 2.8 eV band is attributed to a nitrogen vacancy complex.

AB - The stability of defects present in GaN:Mg has been investigated using photoluminescence (PL) spectroscopy. The two dominant defect-related PL emission bands in p-type GaN were investigated, the blue band at 2.8 eV and the ultraviolet (UV) emission band at 3.27 eV. The intensity of the 3.27 eV PL band increases with increasing resistivity, whereas the 2.8 eV PL band intensity increases with a decrease in resistivity. The luminescence data is explained by a model whereby the concentration of luminescent centers depends on the Fermi level position. The shallow donor responsible for the UV band is attributed to hydrogen, whereas the deep donor defect responsible for the 2.8 eV band is attributed to a nitrogen vacancy complex.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

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